- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 3
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
1,900
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HS 10-TDFN
|
- | 4.5 V ~ 6.5 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 14ns，9ns | 0.8V，2.5V | - | ||
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Maxim Integrated |
1,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
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- | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Independent | Low-Side | N-Channel MOSFET | 40ns，25ns | 2V，4.25V | 4A，4A | ||
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Microchip Technology |
2,984
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 3A L-SIDE 8SOIC
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Automotive，AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 11ns，11ns | 0.8V，2.4V | 3A，3A |
