- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 118
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS |
Enquête
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-
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MOQ: 276 MPQ: 1
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IC DRVR HALF BRIDGE 2A 16-SOIC
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- | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 8ns，7ns | 6V，9.6V | 2A，2A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 230 MPQ: 1
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IC DRVR HALF BRIDGE 4A 16-SOIC
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- | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 650V | 23ns，22ns | 6V，7V | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 368 MPQ: 1
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IC DRIVER HALF BRDG 600MA 16-SOI
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- | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 650V | 23ns，22ns | 6V，7V | 600mA，600mA | ||
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IXYS |
Enquête
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- |
-
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MOQ: 470 MPQ: 1
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IC DRVR HALF BRIDGE 600MA 8-SOIC
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- | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 28ns，18ns | 2.4V，2.7V | 600mA，600mA | ||
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IXYS |
Enquête
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- |
-
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MOQ: 424 MPQ: 1
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IC DRVR HALF BRIDGE 600MA 14SOIC
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- | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 28ns，18ns | 2.4V，2.7V | 600mA，600mA | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC DRVR MOSF/IGBT 30A TO263-5
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- | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 18ns，16ns | 0.8V，3.5V | 30A，30A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC DRVR MOSF/IGBT 30A TO263-5
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- | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 18ns，16ns | 0.8V，3.5V | 30A，30A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC GATE DRIVER ULT FAST 9A 6-DFN
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- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，23ns | 0.8V，2.4V | 9A，9A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC DRVR MOSF/IGBT 30A TO263-5
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- | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 18ns，16ns | 0.8V，3.5V | 30A，30A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC DRVR MOSF/IGBT 30A TO263-5
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- | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 18ns，16ns | 0.8V，3.5V | 30A，30A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 27 MPQ: 1
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IC DRVR MOSF/IGBT 30A 28-SOIC
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- | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 18ns，16ns | 0.8V，3.5V | 30A，30A | ||
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Powerex Inc. |
Enquête
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- |
-
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MOQ: 16 MPQ: 1
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IC IGBT GATE DRIVER INV/AC SERVO
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- | 14 V ~ 15 V | -20°C ~ 60°C (TA) | 12-SIP | Module | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT | - | 300ns，300ns | - | 5A，5A | ||
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Powerex Inc. |
Enquête
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- |
-
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MOQ: 21 MPQ: 1
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IC IGBT GATE DVR ISO 3A
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- | 14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module，12 Leads | Module | Through Hole | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 300ns，300ns | - | 3A，3A | ||
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Vishay Siliconix |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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IC MOSFET DVR ADAPTIVE PWR 8SOIC
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- | 10.8 V ~ 16.5 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 500V | 50ns，35ns | - | 1A，1A | ||
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Vishay Siliconix |
Enquête
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- |
-
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MOQ: 550 MPQ: 1
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IC DRVR MOSF 1/2BRDG N-CH 14SOIC
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- | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 40V | 110ns，50ns | 1V，4V | 500mA，500mA | ||
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Vishay Siliconix |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
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IC FET DRIVER H-BRIDGE 1A 24SOIC
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- | 14.5 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295"，7.50mm Width) | 24-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 40V | 110ns，50ns | 1V，4V | - | ||
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Powerex Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC IGBT GATE DVR ISO 5A
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- | 14.2 V ~ 15.8 V | -25°C ~ 70°C (TA) | 30-SIP Module，21 Leads | Module | Through Hole | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT | - | 600ns，300ns | - | - | ||
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Powerex Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC IGBT GATE DVR ISO 5A
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- | 14 V ~ 15 V | -20°C ~ 70°C (TA) | 8-SIP Module，5 Leads | Module | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT | - | 300ns，300ns | - | 5A，5A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 3-PH 600V DIE
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EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | Die | Chip | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT | 600V | 60ns，26ns | 1.1V，1.7V | - | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 3-PH 600V DIE
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EiceDriver | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | Die | Chip | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT | 600V | 60ns，26ns | 1.1V，1.7V | - |
