- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 6
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC IGBT DRIVER DUAL PDSO18
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- | 14 V ~ 18 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295",7.50mm Width),18 Leads | PG-DSO-18-2 | Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 1200V | 20ns,20ns | 0.8V,2V | ||||
Infineon Technologies |
Enquête
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- |
-
|
MOQ: 1000 MPQ: 1
|
DRIVER IC
|
EiceDriver | 3 V ~ 3.5 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | PG-DSO-16-30 | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel,P-Channel MOSFET | - | 6.5ns,4.5ns | 1.2V,2V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC DRIVER IGBT DSO18
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- | 14 V ~ 18 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295",7.50mm Width),18 Leads | PG-DSO-18-2 | Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 650V | 20ns,20ns | 0.8V,2V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC DRIVER IGBT 2-CHAN PDSO-18-1
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- | 0 V ~ 18 V | - | 20-SOIC (0.295",7.50mm Width),18 Leads | PG-DSO-18-2 | Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 1200V | - | - | ||||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER GATE SINGLE IGBT 8SOIC
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- | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 17ns,17ns | 1.2V,3.2V | ||||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER GATE SINGLE IGBT 8SOIC
|
- | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 17ns,17ns | 1.2V,3.2V |