Découvrez les produits 8
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
NCD5701BDR2G
ON Semiconductor
Enquête
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MOQ: 2500  MPQ: 1
HIGH CURRENT IGBT GATE DRIVER
- 20V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Single Low-Side 1 18ns,19ns -
NCD5701CDR2G
ON Semiconductor
Enquête
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MOQ: 2500  MPQ: 1
HIGH CURRENT IGBT GATE DRIVER
- 20V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Synchronous High-Side or Low-Side 1 18ns,19ns -
NCD5700DR2G
ON Semiconductor
Enquête
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MOQ: 2500  MPQ: 1
HIGH CURRENT IGBT GATE DRIVER
- 20V -40°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC - Synchronous High-Side or Low-Side - 18ns,19ns -
NCV5700DR2G
ON Semiconductor
Enquête
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MOQ: 2500  MPQ: 1
IGBT GATE DRIVER
Automotive,AEC-Q100 20V -40°C ~ 125°C (TA) 16-SOIC (0.154",3.90mm Width) 16-SOIC - Synchronous High-Side or Low-Side - 9.2ns,7.9ns 0.75V,4.3V
NCD5703ADR2G
ON Semiconductor
Enquête
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MOQ: 2500  MPQ: 1
METAL SPIN OF NCD5703A. H
- 20V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single Half-Bridge 1 9.2ns,7.9ns 0.75V,4.3V
NCD5703BDR2G
ON Semiconductor
Enquête
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MOQ: 2500  MPQ: 1
METAL SPIN OF NCD5703B. H
- 20V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single Half-Bridge 1 9.2ns,7.9ns 0.75V,4.3V
NCD5703CDR2G
ON Semiconductor
Enquête
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MOQ: 2500  MPQ: 1
METAL SPIN OF NCD5703C. H
- 20V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single Half-Bridge 1 9.2ns,7.9ns 0.75V,4.3V
NCD5702DR2G
ON Semiconductor
Enquête
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MOQ: 2500  MPQ: 1
METAL SPIN OF NCD5702. HI
- 5.5V -40°C ~ 125°C (TA) 16-SOIC (0.154",3.90mm Width) 16-SOIC Inverting Independent Half-Bridge 1 9.2ns,7.9ns 0.75V,4.3V