Découvrez les produits 11
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
UCC27611DRVT
Texas Instruments
20,250
3 jours
-
MOQ: 250  MPQ: 1
IC GATE DRVR 6SON
Tape & Reel (TR) 4 V ~ 18 V -40°C ~ 140°C (TJ) 6-WDFN Exposed Pad 6-WSON (2x2) Surface Mount Inverting,Non-Inverting Independent High-Side or Low-Side N-Channel MOSFET 5ns,5ns 1.3V,1.85V
UCC27611DRVT
Texas Instruments
21,859
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER 6SON
Cut Tape (CT) 4 V ~ 18 V -40°C ~ 140°C (TJ) 6-WDFN Exposed Pad 6-WSON (2x2) Surface Mount Inverting,Non-Inverting Independent High-Side or Low-Side N-Channel MOSFET 5ns,5ns 1.3V,1.85V
UCC27611DRVT
Texas Instruments
21,859
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER 6SON
- 4 V ~ 18 V -40°C ~ 140°C (TJ) 6-WDFN Exposed Pad 6-WSON (2x2) Surface Mount Inverting,Non-Inverting Independent High-Side or Low-Side N-Channel MOSFET 5ns,5ns 1.3V,1.85V
UCD7138DRST
Texas Instruments
2,500
3 jours
-
MOQ: 250  MPQ: 1
IC PWR DRIVER 6SON
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-SON (3x3) Surface Mount Inverting Single Low-Side N-Channel MOSFET 4ns,3.5ns 1.08V,1.93V
UCD7138DRST
Texas Instruments
3,443
3 jours
-
MOQ: 1  MPQ: 1
IC PWR DRIVER 6SON
Cut Tape (CT) 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-SON (3x3) Surface Mount Inverting Single Low-Side N-Channel MOSFET 4ns,3.5ns 1.08V,1.93V
UCD7138DRST
Texas Instruments
3,443
3 jours
-
MOQ: 1  MPQ: 1
IC PWR DRIVER 6SON
- 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-SON (3x3) Surface Mount Inverting Single Low-Side N-Channel MOSFET 4ns,3.5ns 1.08V,1.93V
UCC27611DRVR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR 6SON
Tape & Reel (TR) 4 V ~ 18 V -40°C ~ 140°C (TJ) 6-WDFN Exposed Pad 6-WSON (2x2) Surface Mount Inverting,Non-Inverting Independent High-Side or Low-Side N-Channel MOSFET 5ns,5ns 1.3V,1.85V
NCD5701ADR2G
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
HIGH CURRENT IGBT GATE DRIVER
Tape & Reel (TR) 20V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount - Single Low-Side IGBT 18ns,19ns -
NCD5701ADR2G
ON Semiconductor
2,444
3 jours
-
MOQ: 1  MPQ: 1
HIGH CURRENT IGBT GATE DRIVER
Cut Tape (CT) 20V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount - Single Low-Side IGBT 18ns,19ns -
NCD5701ADR2G
ON Semiconductor
2,444
3 jours
-
MOQ: 1  MPQ: 1
HIGH CURRENT IGBT GATE DRIVER
- 20V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount - Single Low-Side IGBT 18ns,19ns -
UCD7138DRSR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC PWR DRIVER 6SON
- 4.5 V ~ 18 V -40°C ~ 125°C (TJ) - - - Inverting Single Low-Side N-Channel MOSFET 4ns,3.5ns 1.08V,1.93V