- Packaging:
-
- Series:
-
- Voltage - Supply:
-
- Operating Temperature:
-
- Package / Case:
-
- Supplier Device Package:
-
- Input Type:
-
- Channel Type:
-
- Driven Configuration:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Conditions sélectionnées:
Découvrez les produits 14
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Texas Instruments |
20,250
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRVR 6SON
|
Tape & Reel (TR) | - | 4 V ~ 18 V | -40°C ~ 140°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (2x2) | Inverting,Non-Inverting | Independent | High-Side or Low-Side | 1 | N-Channel MOSFET | 5ns,5ns | 1.3V,1.85V | ||||
Texas Instruments |
21,859
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 6SON
|
Cut Tape (CT) | - | 4 V ~ 18 V | -40°C ~ 140°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (2x2) | Inverting,Non-Inverting | Independent | High-Side or Low-Side | 1 | N-Channel MOSFET | 5ns,5ns | 1.3V,1.85V | ||||
Texas Instruments |
21,859
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 6SON
|
- | - | 4 V ~ 18 V | -40°C ~ 140°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (2x2) | Inverting,Non-Inverting | Independent | High-Side or Low-Side | 1 | N-Channel MOSFET | 5ns,5ns | 1.3V,1.85V | ||||
Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC PWR DRIVER 6SON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-SON (3x3) | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 4ns,3.5ns | 1.08V,1.93V | ||||
Texas Instruments |
3,443
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR DRIVER 6SON
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-SON (3x3) | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 4ns,3.5ns | 1.08V,1.93V | ||||
Texas Instruments |
3,443
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR DRIVER 6SON
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-SON (3x3) | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 4ns,3.5ns | 1.08V,1.93V | ||||
Texas Instruments |
148
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4A/6A 2KVRMS DUAL CH ISO DR 8V
|
Tube | - | 3 V ~ 5.5 V | -40°C ~ 125°C (TA) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | CMOS/TTL | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 5ns,6ns | 1.25V,1.6V | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
4A/6A 2KVRMS DUAL CH ISO DR 8V
|
Tape & Reel (TR) | - | 3 V ~ 5.5 V | -40°C ~ 125°C (TA) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | CMOS/TTL | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 5ns,6ns | 1.25V,1.6V | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
AUTOMOTIVE 4-A,6-A,3.0-KV(RMS)
|
Tube | Automotive,AEC-Q100 | 3 V ~ 5.5 V | -40°C ~ 150°C (TA) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | CMOS/TTL | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 5ns,6ns | 1.25V,1.6V | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR 6SON
|
Tape & Reel (TR) | - | 4 V ~ 18 V | -40°C ~ 140°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (2x2) | Inverting,Non-Inverting | Independent | High-Side or Low-Side | 1 | N-Channel MOSFET | 5ns,5ns | 1.3V,1.85V | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
4A/6A 2KVRMS DUAL CH ISO DR 8V
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 3 V ~ 5.5 V | -40°C ~ 150°C (TA) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | CMOS/TTL | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 5ns,6ns | 1.25V,1.6V | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HIGH CURRENT IGBT GATE DRIVER
|
Tape & Reel (TR) | - | 20V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | - | Single | Low-Side | 1 | IGBT | 18ns,19ns | - | ||||
ON Semiconductor |
2,444
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH CURRENT IGBT GATE DRIVER
|
Cut Tape (CT) | - | 20V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | - | Single | Low-Side | 1 | IGBT | 18ns,19ns | - | ||||
ON Semiconductor |
2,444
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH CURRENT IGBT GATE DRIVER
|
- | - | 20V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | - | Single | Low-Side | 1 | IGBT | 18ns,19ns | - |