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- Supplier Device Package：
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- Input Type：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 6
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Texas Instruments |
20,250
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRVR 6SON
|
- | 4 V ~ 18 V | -40°C ~ 140°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (2x2) | Inverting，Non-Inverting | Independent | High-Side or Low-Side | 1 | N-Channel MOSFET | 5ns，5ns | 1.3V，1.85V | ||
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Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC PWR DRIVER 6SON
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-SON (3x3) | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 4ns，3.5ns | 1.08V，1.93V | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
4A/6A 2KVRMS DUAL CH ISO DR 8V
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- | 3 V ~ 5.5 V | -40°C ~ 125°C (TA) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | CMOS/TTL | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 5ns，6ns | 1.25V，1.6V | ||
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR 6SON
|
- | 4 V ~ 18 V | -40°C ~ 140°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (2x2) | Inverting，Non-Inverting | Independent | High-Side or Low-Side | 1 | N-Channel MOSFET | 5ns，5ns | 1.3V，1.85V | ||
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
4A/6A 2KVRMS DUAL CH ISO DR 8V
|
Automotive，AEC-Q100 | 3 V ~ 5.5 V | -40°C ~ 150°C (TA) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | CMOS/TTL | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 5ns，6ns | 1.25V，1.6V | ||
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HIGH CURRENT IGBT GATE DRIVER
|
- | 20V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | - | Single | Low-Side | 1 | IGBT | 18ns，19ns | - |
