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- Rise / Fall Time (Typ)：
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- Conditions sélectionnées:
Découvrez les produits 3
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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Infineon Technologies |
Enquête
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MOQ: 3800 MPQ: 1
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IC MOSFET IGBT 20V
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | 2 | IGBT，N-Channel MOSFET | 700V | 150ns，50ns | ||
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Infineon Technologies |
Enquête
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MOQ: 1 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 44PLCC
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Tape & Reel (TR) | 12 V ~ 20 V | -40°C ~ 125°C (TA) | - | 44-PLCC | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | - | ||
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Infineon Technologies |
Enquête
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MOQ: 1 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 44PLCC
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Bulk | 12 V ~ 20 V | -40°C ~ 125°C (TA) | - | 44-PLCC | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | - |
