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- Voltage - Supply：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 20
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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ON Semiconductor |
29,499
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | ||
|
|
|
ON Semiconductor |
4,734
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HI/LOW SIDE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 1.2V，2.5V | ||
|
|
|
ON Semiconductor |
6,144
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | ||
|
|
|
Infineon Technologies |
2,133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
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|
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Texas Instruments |
3,182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 1.2V，2.2V | ||
|
|
|
Infineon Technologies |
914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 6V，9.5V | ||
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|
|
Texas Instruments |
648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 1.2V，2.2V | ||
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|
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Diodes Incorporated |
298
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
- | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 305ns，20ns | - | ||
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|
|
Diodes Incorporated |
891
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，13ns | 6V，9.5V | ||
|
|
|
Infineon Technologies |
780
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 0.8V，2.5V | ||
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|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 15ns，13ns | 6V，9.5V | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FLYBACK CONVERTER SM8
|
- | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | SOT-223-8 | SM8 | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 305ns，20ns | - | ||
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|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET IGBT DRIVER 16SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | ||
|
|
Monolithic Power Systems Inc. |
2,282
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | |||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC FLYBACK CONVERTER SM8
|
- | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | SOT-223-8 | SM8 | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 305ns，20ns | - | ||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 32V NONINV 8SOIC
|
- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 32V NONINV 8SOIC
|
- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 32V INV 8SOIC
|
- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 32V NONINV 8SOIC
|
- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V |
