- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 19
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Texas Instruments |
2,069
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER- 0.5A/1A PEAK C
|
Tube | 10 V ~ 20 V | -40°C ~ 125°C (TA) | - | Independent | High-Side or Low-Side | IGBT，N-Channel，P-Channel MOSFET | 600V | 35ns，16ns | 1.2V，2V | ||
|
|
|
Texas Instruments |
249
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMP SW FET DRVR 8-SOIC
|
Tube | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
186
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMP SW FET DRVR 8-SOIC
|
Tube | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
216
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT SW FET DRVR 8-SOIC
|
Tube | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
244
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT SW FET DRVR 8-SOIC
|
Tube | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | ||
|
|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
UCC27710DR
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 125°C (TA) | - | Independent | High-Side or Low-Side | IGBT，N-Channel，P-Channel MOSFET | 600V | 35ns，16ns | 1.2V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC COMP SWITCH FET DVR 8SOIC
|
Tape & Reel (TR) | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC COMP SWITCH FET DVR 8SOIC
|
Tape & Reel (TR) | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC COMP SW FET DRVR 8-SOIC
|
Tube | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC COMPLEMENT SW FET DRVR 8-SOIC
|
Tube | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC COMPLEMENT SW FET DRVR 8-SOIC
|
Tube | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC COMP SW FET DRVR 8-SOIC
|
Tube | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC COMPLEMENT SW FET DRIVR 8SOIC
|
Tape & Reel (TR) | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Low-Side | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | ||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC HALF BRIDGE DVR HV OSC 8SOIC
|
Tape & Reel (TR) | 8 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 40ns，20ns | - | |||
|
|
ON Semiconductor |
2,345
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DVR HV OSC 8SOIC
|
Cut Tape (CT) | 8 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 40ns，20ns | - | |||
|
|
ON Semiconductor |
2,345
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DVR HV OSC 8SOIC
|
- | 8 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 40ns，20ns | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC HALF BRIDGE DVR HV OSC 8SOIC
|
Tape & Reel (TR) | 8 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 40ns，20ns | - | |||
|
|
ON Semiconductor |
1,995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DVR HV OSC 8SOIC
|
Cut Tape (CT) | 8 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 40ns，20ns | - | |||
|
|
ON Semiconductor |
1,995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DVR HV OSC 8SOIC
|
- | 8 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 40ns，20ns | - |
