Découvrez les produits 23
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
UCC27710D
Texas Instruments
2,069
3 jours
-
MOQ: 1  MPQ: 1
700V GATE DRIVER- 0.5A/1A PEAK C
10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount - Independent High-Side or Low-Side IGBT,N-Channel,P-Channel MOSFET 600V 35ns,16ns 1.2V,2V
UC2715D
Texas Instruments
249
3 jours
-
MOQ: 1  MPQ: 1
IC COMP SW FET DRVR 8-SOIC
7 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC2714D
Texas Instruments
186
3 jours
-
MOQ: 1  MPQ: 1
IC COMP SW FET DRVR 8-SOIC
7 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC3714D
Texas Instruments
216
3 jours
-
MOQ: 1  MPQ: 1
IC COMPLEMENT SW FET DRVR 8-SOIC
7 V ~ 20 V 0°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC3715D
Texas Instruments
244
3 jours
-
MOQ: 1  MPQ: 1
IC COMPLEMENT SW FET DRVR 8-SOIC
7 V ~ 20 V 0°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC2715DG4
Texas Instruments
Enquête
-
-
MOQ: 300  MPQ: 1
IC COMP SW FET DRVR 8-SOIC
7 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC3714DG4
Texas Instruments
Enquête
-
-
MOQ: 225  MPQ: 1
IC COMPLEMENT SW FET DRVR 8-SOIC
7 V ~ 20 V 0°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC2714NG4
Texas Instruments
Enquête
-
-
MOQ: 250  MPQ: 1
IC COMPLEMENT SW FET DRVR 8-DIP
7 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC3715DG4
Texas Instruments
Enquête
-
-
MOQ: 225  MPQ: 1
IC COMPLEMENT SW FET DRVR 8-SOIC
7 V ~ 20 V 0°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC2714DG4
Texas Instruments
Enquête
-
-
MOQ: 225  MPQ: 1
IC COMP SW FET DRVR 8-SOIC
7 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC2715DP
Texas Instruments
Enquête
-
-
MOQ: 200  MPQ: 1
IC COMP SW FET DRVR 16-SOIC
7 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC3715N
Texas Instruments
Enquête
-
-
MOQ: 250  MPQ: 1
IC COMPLEMENT SW FET DRVR 8-DIP
7 V ~ 20 V 0°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC3714N
Texas Instruments
Enquête
-
-
MOQ: 200  MPQ: 1
IC COMPLEMENT SW FET DRVR 8-DIP
7 V ~ 20 V 0°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC3714DP
Texas Instruments
Enquête
-
-
MOQ: 240  MPQ: 1
IC COMPLEMNT SW FET DRVR 16-SOIC
7 V ~ 20 V 0°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC2714N
Texas Instruments
Enquête
-
-
MOQ: 200  MPQ: 1
IC COMPLEMENT SW FET DRVR 8-DIP
7 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC2715N
Texas Instruments
Enquête
-
-
MOQ: 200  MPQ: 1
IC COMPLEMENT SW FET DRVR 8-DIP
7 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC3715DP
Texas Instruments
Enquête
-
-
MOQ: 240  MPQ: 1
IC COMP SW FET DRVR 16-SOIC
7 V ~ 20 V 0°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC2714DP
Texas Instruments
Enquête
-
-
MOQ: 240  MPQ: 1
IC COMP SWITCH FET DRIVER 16SOIC
7 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC2714DPG4
Texas Instruments
Enquête
-
-
MOQ: 240  MPQ: 1
IC COMP SWITCH FET DRIVER 16SOIC
7 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC2715NG4
Texas Instruments
Enquête
-
-
MOQ: 200  MPQ: 1
IC COMPLEMENT SW FET DRVR 8-DIP
7 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V