Découvrez les produits 7
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
UCC27710DR
Texas Instruments
Enquête
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MOQ: 2500  MPQ: 1
UCC27710DR
10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Independent High-Side or Low-Side IGBT,N-Channel,P-Channel MOSFET 600V 35ns,16ns 1.2V,2V
UC3715DTR
Texas Instruments
Enquête
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MOQ: 2500  MPQ: 1
IC COMP SW FET DRVR 16-SOIC
7 V ~ 20 V 0°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC2715DTR
Texas Instruments
Enquête
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MOQ: 2500  MPQ: 1
IC COMP SWITCH FET DVR 8SOIC
7 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC2715DTRG4
Texas Instruments
Enquête
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MOQ: 2500  MPQ: 1
IC COMP SWITCH FET DVR 8SOIC
7 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
UC3714DTR
Texas Instruments
Enquête
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MOQ: 2500  MPQ: 1
IC COMPLEMENT SW FET DRIVR 8SOIC
7 V ~ 20 V 0°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 30ns,25ns 0.8V,2V
NCP1392DDR2G
ON Semiconductor
Enquête
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MOQ: 2500  MPQ: 1
IC HALF BRIDGE DVR HV OSC 8SOIC
8 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 600V 40ns,20ns -
NCP1392BDR2G
ON Semiconductor
Enquête
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MOQ: 2500  MPQ: 1
IC HALF BRIDGE DVR HV OSC 8SOIC
8 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 600V 40ns,20ns -