Fabricant:
Package / Case:
Supplier Device Package:
Driven Configuration:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Découvrez les produits 7
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ)
PE29100A-X
pSemi
500
3 jours
-
MOQ: 500  MPQ: 1
HIGH-SPEED FET DRIVER 33 MHZ
Tape & Reel (TR) 4 V ~ 5.5 V -40°C ~ 125°C (TJ) Die Die - Synchronous Half-Bridge 100V 2.5ns,2.5ns
PE29100A-X
pSemi
615
3 jours
-
MOQ: 1  MPQ: 1
HIGH-SPEED FET DRIVER 33 MHZ
Cut Tape (CT) 4 V ~ 5.5 V -40°C ~ 125°C (TJ) Die Die - Synchronous Half-Bridge 100V 2.5ns,2.5ns
PE29100A-X
pSemi
615
3 jours
-
MOQ: 1  MPQ: 1
HIGH-SPEED FET DRIVER 33 MHZ
- 4 V ~ 5.5 V -40°C ~ 125°C (TJ) Die Die - Synchronous Half-Bridge 100V 2.5ns,2.5ns
MAX15025GATB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Tape & Reel (TR) 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Independent Low-Side - 48ns,32ns
MAX15025HATB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Tape & Reel (TR) 6.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Independent Low-Side - 48ns,32ns
MAX15025FATB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Tape & Reel (TR) 6.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Independent Low-Side - 48ns,32ns
MAX15025EATB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Tape & Reel (TR) 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Inverting,Non-Inverting Independent Low-Side - 48ns,32ns