PMIC - Pilotes de porte - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Voltage - Supply：

Operating Temperature：

Package / Case：

Supplier Device Package：

Input Type：

Channel Type：

Driven Configuration：

Number of Drivers：

Gate Type：

High Side Voltage - Max (Bootstrap)：

Rise / Fall Time (Typ)：

Logic Voltage - VIL, VIH：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Input Type	Channel Type	Driven Configuration	Number of Drivers	Gate Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Logic Voltage - VIL, VIH
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Input Type	Channel Type	Driven Configuration	Number of Drivers	Gate Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Logic Voltage - VIL, VIH
	ZXGD3004E6TA	Diodes Incorporated	33,000	3 jours	-	IC GATE DRVR IGBT/MOSFET SOT23-6 MOQ: 3000 MPQ: 1	IC GATE DRVR IGBT/MOSFET SOT23-6	Tape & Reel (TR)	-	40V (Max)	-55°C ~ 150°C (TJ)	SOT-23-6	SOT-23-6	Non-Inverting	Single	Low-Side	1	IGBT，N-Channel MOSFET	-	13.4ns，12.4ns	-
	ZXGD3004E6TA	Diodes Incorporated	34,034	3 jours	-	IC GATE DRVR IGBT/MOSFET SOT23-6 MOQ: 1 MPQ: 1	IC GATE DRVR IGBT/MOSFET SOT23-6	Cut Tape (CT)	-	40V (Max)	-55°C ~ 150°C (TJ)	SOT-23-6	SOT-23-6	Non-Inverting	Single	Low-Side	1	IGBT，N-Channel MOSFET	-	13.4ns，12.4ns	-
	ZXGD3004E6TA	Diodes Incorporated	34,034	3 jours	-	IC GATE DRVR IGBT/MOSFET SOT23-6 MOQ: 1 MPQ: 1	IC GATE DRVR IGBT/MOSFET SOT23-6	-	-	40V (Max)	-55°C ~ 150°C (TJ)	SOT-23-6	SOT-23-6	Non-Inverting	Single	Low-Side	1	IGBT，N-Channel MOSFET	-	13.4ns，12.4ns	-
	2SC0108T2F1-17	Power Integrations	734	3 jours	-	IC DUAL GATE DRIVER 8A MOQ: 1 MPQ: 1	IC DUAL GATE DRIVER 8A	Tray	SCALE-2	14.5 V ~ 15.5 V	-40°C ~ 85°C (TA)	Module	Module	-	Independent	High-Side or Low-Side	2	IGBT	1700V	17ns，15ns	-
	2SC0108T2H0-17	Power Integrations	460	3 jours	-	IC DUAL GATE DRIVER 8A MOQ: 1 MPQ: 1	IC DUAL GATE DRIVER 8A	Tray	SCALE-2	14.5 V ~ 15.5 V	-40°C ~ 85°C (TA)	Module	Module	-	Independent	High-Side or Low-Side	2	IGBT	1200V	17ns，15ns	-
	2SC0108T2D0-12	Power Integrations	302	3 jours	-	IC DUAL GATE DRIVER 8A MOQ: 1 MPQ: 1	IC DUAL GATE DRIVER 8A	Tray	SCALE-2	14.5 V ~ 15.5 V	-40°C ~ 85°C (TA)	Module	Module	-	Independent	High-Side or Low-Side	2	IGBT	1200V	17ns，15ns	-
	2SC0108T2G0-17	Power Integrations	299	3 jours	-	IC DUAL GATE DRIVER 8A MOQ: 1 MPQ: 1	IC DUAL GATE DRIVER 8A	Tray	SCALE-2	14.5 V ~ 15.5 V	-40°C ~ 85°C (TA)	Module	Module	-	Independent	High-Side or Low-Side	2	IGBT	1700V	17ns，15ns	-
	BUK218-50DC,118	NXP USA Inc.	Enquête	-	-	TOPFET DUAL SWITCH D2PAK MOQ: 4800 MPQ: 1	TOPFET DUAL SWITCH D2PAK	Tape & Reel (TR)	-	5.5 V ~ 35 V	-40°C ~ 150°C (TJ)	TO-263-7，D2Pak (6 Leads + Tab)，TO-263CB	D2PAK-7	-	Independent	High-Side	2	N-Channel MOSFET	-	-	1.2V，3V
	IXDD408SI	IXYS	Enquête	-	-	IC MOSFET DRIVER LS 8A SGL 8SOIC MOQ: 94 MPQ: 1	IC MOSFET DRIVER LS 8A SGL 8SOIC	Tube	-	4.5 V ~ 25 V	-40°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Non-Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	14ns，15ns	0.8V，3.5V
	IXDD408YI	IXYS	Enquête	-	-	IC MOSFET DRVR LS 8A SGL 5TO-263 MOQ: 50 MPQ: 1	IC MOSFET DRVR LS 8A SGL 5TO-263	Tube	-	4.5 V ~ 25 V	-40°C ~ 150°C (TJ)	TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA	TO-263 (D2Pak)	Non-Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	14ns，15ns	0.8V，3.5V
	BUK218-50DY,118	NXP USA Inc.	Enquête	-	-	TOPFET DUAL SWITCH D2PAK MOQ: 4800 MPQ: 1	TOPFET DUAL SWITCH D2PAK	Tape & Reel (TR)	-	5.5 V ~ 35 V	-40°C ~ 150°C (TJ)	TO-263-7，D2Pak (6 Leads + Tab)，TO-263CB	D2PAK-7	-	Independent	High-Side	2	N-Channel MOSFET	-	-	1.2V，3V

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