- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Input Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Conditions sélectionnées:
Découvrez les produits 10
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|
|
|
Diodes Incorporated |
33,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | - | ||
|
|
|
Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | - | ||
|
|
|
Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | - | ||
|
|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 4800 MPQ: 1
|
TOPFET DUAL SWITCH D2PAK
|
Tape & Reel (TR) | 5.5 V ~ 35 V | -40°C ~ 150°C (TJ) | TO-263-7，D2Pak (6 Leads + Tab)，TO-263CB | D2PAK-7 | Surface Mount | - | Independent | High-Side | 2 | N-Channel MOSFET | - | - | 1.2V，3V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRIVER LS 8A SGL 8-DIP
|
Tube | 4.5 V ~ 25 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 14ns，15ns | 0.8V，3.5V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 94 MPQ: 1
|
IC MOSFET DRIVER LS 8A SGL 8SOIC
|
Tube | 4.5 V ~ 25 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 14ns，15ns | 0.8V，3.5V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR LS 8A SGL 5TO-263
|
Tube | 4.5 V ~ 25 V | -40°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 14ns，15ns | 0.8V，3.5V | ||
|
|
|
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 4800 MPQ: 1
|
TOPFET DUAL SWITCH D2PAK
|
Tape & Reel (TR) | 5.5 V ~ 35 V | -40°C ~ 150°C (TJ) | TO-263-7，D2Pak (6 Leads + Tab)，TO-263CB | D2PAK-7 | Surface Mount | - | Independent | High-Side | 2 | N-Channel MOSFET | - | - | 1.2V，3V | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR LS 8A SGL 5TO-220
|
Tube | 4.5 V ~ 25 V | -40°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 14ns，15ns | 0.8V，3.5V | ||
|
|
|
Microsemi Corporation |
Enquête
|
- |
-
|
MOQ: 10 MPQ: 1
|
IC DRIVER DUAL IGBT ISO 2X2
|
Bulk | 14.5 V ~ 15.5 V | -40°C ~ 85°C (TA) | - | - | - | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 1200V | - | 0.8V，2V |
