- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 170
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Maxim Integrated |
628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.4V | ||||
Texas Instruments |
3,826
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC INVERTING MOSFET DRVR 8-DIP
|
Tube | - | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.2V | ||||
Maxim Integrated |
140
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.4V | ||||
Texas Instruments |
104
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS FET DRIVER 16-SOIC
|
Tube | - | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.2V | ||||
IXYS Integrated Circuits Division |
376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,8ns | 0.8V,2.4V | ||||
Texas Instruments |
55
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS FET DRIVER 16-SOIC
|
Tube | - | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.2V | ||||
Maxim Integrated |
25
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,8ns | 0.8V,2.4V | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR INV 1.5A 8-DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,8ns | 0.8V,2.4V | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV 1.5A 8-DFN
|
Cut Tape (CT) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,8ns | 0.8V,2.4V | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV 1.5A 8-DFN
|
- | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,8ns | 0.8V,2.4V | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.4V | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 150 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.4V | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC INVERTING MOSFET DRVR 8-DIP
|
Tube | - | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.2V | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC DUAL HIGH SID FET DRIVER 8DIP
|
Tube | - | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.2V | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC DUAL HIGH SID FET DRIVER 8DIP
|
Tube | - | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.2V | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 80 MPQ: 1
|
IC DUAL HS FET DRIVER 16-SOIC
|
Tube | - | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.2V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL OD 8CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300",7.62mm) | 8-CERDIP | Through Hole | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 40ns,40ns (Max) | 0.8V,2.4V | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.4V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2565 MPQ: 1
|
IC DRIVER HI SIDE RECHARGE 8-SOI
|
Tube | - | 5 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side | 1 | N-Channel MOSFET | 150V | 200ns,100ns | 1.4V,3V |