- Packaging:
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- Voltage - Supply:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Conditions sélectionnées:
Découvrez les produits 43
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | ||
Maxim Integrated |
952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | ||||
Maxim Integrated |
628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
|
Tube | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | ||||
Maxim Integrated |
506
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV DUAL NONINV 8-SOIC
|
Tube | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | ||||
Maxim Integrated |
217
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8-SOIC
|
Tube | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | ||||
Maxim Integrated |
103
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL NONINV 8-DIP
|
Tube | 4.5 V ~ 18 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRV DUAL NONINV 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DRIVER DUAL MOSFET 1.5A 8-DIP
|
Tube | 4.5 V ~ 18 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DRIVER DUAL MOSFET 1.5A 8SOIC
|
Tube | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DRIVER DUAL MOSFET 1.5A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | ||||
Microchip Technology |
3,557
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tube | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 30ns,30ns | ||||
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 30ns,30ns | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 30ns,30ns | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8MSOP
|
Tape & Reel (TR) | 4.5 V ~ 18 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 19ns,19ns | ||||
Microchip Technology |
1,486
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8MSOP
|
Cut Tape (CT) | 4.5 V ~ 18 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 19ns,19ns | ||||
Microchip Technology |
1,486
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8MSOP
|
- | 4.5 V ~ 18 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 19ns,19ns | ||||
Microchip Technology |
539
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | 4.5 V ~ 18 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 30ns,30ns | ||||
Microchip Technology |
734
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tube | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 30ns,30ns | ||||
Microchip Technology |
648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL 8-SOIC
|
Tube | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 40ns,40ns (Max) |