Series:
Supplier Device Package:
Driven Configuration:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Découvrez les produits 5
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Operating Temperature Package / Case Supplier Device Package Input Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
IR44273LTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR LOW SIDE SOT23-5
Tape & Reel (TR) μHVIC -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Non-Inverting Low-Side IGBT,N-Channel MOSFET - 10ns,10ns 0.6V,2.7V
IR44273LTRPBF
Infineon Technologies
1,721
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR LOW SIDE SOT23-5
Cut Tape (CT) μHVIC -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Non-Inverting Low-Side IGBT,N-Channel MOSFET - 10ns,10ns 0.6V,2.7V
IR44273LTRPBF
Infineon Technologies
1,721
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR LOW SIDE SOT23-5
- μHVIC -40°C ~ 150°C (TJ) SC-74A,SOT-753 SOT-23-5 Non-Inverting Low-Side IGBT,N-Channel MOSFET - 10ns,10ns 0.6V,2.7V
IR20153SPBF
Infineon Technologies
Enquête
-
-
MOQ: 2565  MPQ: 1
IC DRIVER HI SIDE RECHARGE 8-SOI
Tube - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting High-Side N-Channel MOSFET 150V 200ns,100ns 1.4V,3V
IR20153STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI SIDE RECHARGE 8SOIC
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting High-Side N-Channel MOSFET 150V 200ns,100ns 1.4V,3V