- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Conditions sélectionnées:
Découvrez les produits 45
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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Microchip Technology |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE SOT-23
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Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | |||
|
|
Microchip Technology |
3,359
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE SOT-23
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | |||
|
|
Microchip Technology |
3,359
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE SOT-23
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | |||
|
|
Linear Technology/Analog Devices |
679
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DRIVER N-CH 14SOIC
|
Tube | 10 V ~ 15 V | 0°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | |||
|
|
Linear Technology/Analog Devices |
435
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH16SOIC
|
Tube | 10 V ~ 15 V | 0°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | |||
|
|
Linear Technology/Analog Devices |
959
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR N-CH 16-SOIC
|
Tube | 10 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | |||
|
|
Linear Technology/Analog Devices |
524
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH 16DIP
|
Tube | 10 V ~ 15 V | 0°C ~ 125°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | |||
|
|
Linear Technology/Analog Devices |
737
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DRIVER N-CH 14SOIC
|
Tube | 10 V ~ 15 V | -40°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | |||
|
|
Linear Technology/Analog Devices |
400
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH 16DIP
|
Tube | 10 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE SOT-23
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | |||
|
|
Microchip Technology |
1,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE SOT-23
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | |||
|
|
Microchip Technology |
1,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE SOT-23
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (2x2) | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | |||
|
|
Microchip Technology |
2,995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (2x2) | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (2x2) | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (2x2) | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | |||
|
|
Microchip Technology |
2,341
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (2x2) | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (2x2) | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | |||
|
|
Microchip Technology |
576
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL 8SOIC
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | |||
|
|
Microchip Technology |
361
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL 8MSOP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns |
