Découvrez les produits 8
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Driven Configuration Gate Type Rise / Fall Time (Typ)
1EDN8511BXUSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
DRIVER IC
Tape & Reel (TR) 8 V ~ 20 V Half-Bridge,Low-Side N-Channel,P-Channel MOSFET 6.5ns,4.5ns
1EDN8511BXUSA1
Infineon Technologies
2,696
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) 8 V ~ 20 V Half-Bridge,Low-Side N-Channel,P-Channel MOSFET 6.5ns,4.5ns
1EDN8511BXUSA1
Infineon Technologies
2,696
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
- 8 V ~ 20 V Half-Bridge,Low-Side N-Channel,P-Channel MOSFET 6.5ns,4.5ns
1EDN7511BXUSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
DRIVER IC
Tape & Reel (TR) 4.5 V ~ 20 V Half-Bridge,Low-Side N-Channel,P-Channel MOSFET 6.5ns,4.5ns
1EDN7511BXUSA1
Infineon Technologies
2,449
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) 4.5 V ~ 20 V Half-Bridge,Low-Side N-Channel,P-Channel MOSFET 6.5ns,4.5ns
1EDN7511BXUSA1
Infineon Technologies
2,449
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
- 4.5 V ~ 20 V Half-Bridge,Low-Side N-Channel,P-Channel MOSFET 6.5ns,4.5ns
1EDN7511BXTSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR LOW-SIDE SOT23-6
Tape & Reel (TR) 4.5 V ~ 20 V Low-Side IGBT,N-Channel MOSFET -
1EDN8511BXTSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR LOW-SIDE SOT23-6
Tape & Reel (TR) 4.5 V ~ 20 V Half-Bridge,Low-Side N-Channel,P-Channel MOSFET 6.5ns,4.5ns