- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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Découvrez les produits 192
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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|
ON Semiconductor |
42,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | ||
|
|
|
ON Semiconductor |
43,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | ||
|
|
|
ON Semiconductor |
43,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | ||
|
|
|
Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVR DUAL HS 4A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | ||
|
|
|
Texas Instruments |
7,348
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVR DUAL HS 4A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | ||
|
|
|
Texas Instruments |
7,348
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVR DUAL HS 4A 8SOIC
|
- | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | ||
|
|
|
Infineon Technologies |
17,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 22ns，18ns | 0.8V，2.5V | ||
|
|
|
Infineon Technologies |
19,926
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 22ns，18ns | 0.8V，2.5V | ||
|
|
|
Infineon Technologies |
19,926
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 22ns，18ns | 0.8V，2.5V | ||
|
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | ||
|
|
|
ON Semiconductor |
4,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | ||
|
|
|
ON Semiconductor |
4,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
- | Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | ||
|
|
|
Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8SOIC
|
Tape & Reel (TR) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 7.2ns，5.5ns | 1.3V，2.7V | ||
|
|
|
Texas Instruments |
3,318
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8SOIC
|
Cut Tape (CT) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 7.2ns，5.5ns | 1.3V，2.7V | ||
|
|
|
Texas Instruments |
3,318
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8SOIC
|
- | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 7.2ns，5.5ns | 1.3V，2.7V | ||
|
|
|
IXYS Integrated Circuits Division |
7,173
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL ENABLE 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | ||
|
|
|
IXYS Integrated Circuits Division |
5,639
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL NONINV 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | ||
|
|
|
Renesas Electronics America Inc. |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER HS 1-CH 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | ||
|
|
|
Renesas Electronics America Inc. |
2,897
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HS 1-CH 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | ||
|
|
|
Renesas Electronics America Inc. |
2,897
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HS 1-CH 8-SOIC
|
- | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V |
