Fabricant:
Supplier Device Package:
Channel Type:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Découvrez les produits 14
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Supplier Device Package Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
UCC27714D
Texas Instruments
502
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HI/LO 600V 4A 14SOIC
Tube 10 V ~ 18 V -40°C ~ 125°C (TJ) 14-SOIC Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 1.2V,2.7V
IRS21864SPBF
Infineon Technologies
1,322
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE 600V 14SOIC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-SOIC Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 22ns,18ns 0.8V,2.5V
UCC27714DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DVR HI/LO 600V 4A 14SOIC
Tape & Reel (TR) 10 V ~ 18 V -40°C ~ 125°C (TJ) 14-SOIC Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 1.2V,2.7V
UCC27714DR
Texas Instruments
6,035
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HI/LO 600V 4A 14SOIC
Cut Tape (CT) 10 V ~ 18 V -40°C ~ 125°C (TJ) 14-SOIC Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 1.2V,2.7V
UCC27714DR
Texas Instruments
6,035
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HI/LO 600V 4A 14SOIC
- 10 V ~ 18 V -40°C ~ 125°C (TJ) 14-SOIC Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 1.2V,2.7V
IRS21864STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE 600V 14SOIC
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-SOIC Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 22ns,18ns 0.8V,2.5V
IRS21864STRPBF
Infineon Technologies
1,875
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE 600V 14SOIC
Cut Tape (CT) 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-SOIC Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 22ns,18ns 0.8V,2.5V
IRS21864STRPBF
Infineon Technologies
1,875
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE 600V 14SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-SOIC Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 22ns,18ns 0.8V,2.5V
L6491D
STMicroelectronics
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR 4A HIGH/LOW 14SOIC
Tube 10 V ~ 20 V -40°C ~ 125°C (TJ) 14-SO Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 1.45V,2V
L6491DTR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DVR 4A HIGH/LOW 14SOIC
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 125°C (TJ) 14-SO Independent Half-Bridge - IGBT,N-Channel MOSFET 600V 15ns,15ns 1.45V,2V
ATA6821-TUQ
Microchip Technology
Enquête
-
-
MOQ: 620  MPQ: 1
IC DRIVER PWR 1CH HI SPD 14-SOIC
Tape & Reel (TR) 16 V ~ 30 V -40°C ~ 150°C (TJ) 14-SOIC Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 12ns,12ns -
ATA6821-TUS
Microchip Technology
Enquête
-
-
MOQ: 4000  MPQ: 1
IC DRIVER PWR 1CH HI SPD 14-SOIC
Tube 16 V ~ 30 V -40°C ~ 150°C (TJ) 14-SOIC Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 12ns,12ns -
ATA6821-TUQY
Microchip Technology
Enquête
-
-
MOQ: 4000  MPQ: 1
IC DRIVER PWR 1CH HI SPD 14-SOIC
Tape & Reel (TR) 16 V ~ 30 V -40°C ~ 150°C (TJ) 14-SOIC Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 12ns,12ns -
ATA6821-TUSY
Microchip Technology
Enquête
-
-
MOQ: 3100  MPQ: 1
IC DRIVER PWR 1CH HI SPD 14-SOIC
Tube 16 V ~ 30 V -40°C ~ 150°C (TJ) 14-SOIC Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 12ns,12ns -