- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Conditions sélectionnées:
Découvrez les produits 39
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | |
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Renesas Electronics America Inc. |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER HS 1-CH 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | ||
|
|
|
Renesas Electronics America Inc. |
2,897
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HS 1-CH 8-SOIC
|
Cut Tape (CT) | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | ||
|
|
|
Renesas Electronics America Inc. |
2,897
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HS 1-CH 8-SOIC
|
- | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | ||
|
|
|
Renesas Electronics America Inc. |
1,937
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR HS 8-SOIC
|
Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | ||
|
|
|
Renesas Electronics America Inc. |
771
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR SNGL 8-DIP
|
Bulk | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | ||
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|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET SGL HS 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | ||
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|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 582 MPQ: 1
|
IC PWR MOSFET DVR HS 8-SOIC
|
Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET SGL HS 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET SGL HS 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | ||
|
|
Microchip Technology |
152
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.0A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | 2 | IGBT，N-Channel，P-Channel MOSFET | 15ns，18ns | |||
|
|
Microchip Technology |
240
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.0A DUAL 8DFN
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Inverting | Independent | 2 | IGBT，N-Channel，P-Channel MOSFET | 15ns，18ns | |||
|
|
Microchip Technology |
1,257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8-MSOP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Inverting | Independent | 2 | N-Channel MOSFET | 15ns，15ns | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 4.0A DUAL 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel，P-Channel MOSFET | 15ns，18ns | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | 2 | N-Channel MOSFET | 15ns，15ns | |||
|
|
Microchip Technology |
2,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | 2 | N-Channel MOSFET | 15ns，15ns | |||
|
|
Microchip Technology |
2,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | 2 | N-Channel MOSFET | 15ns，15ns | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 15ns，15ns | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL-NON 4A 8MSOP
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 15ns，15ns | |||
|
|
Microchip Technology |
704
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.0A DUAL 8SOIC
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel，P-Channel MOSFET | 15ns，18ns | |||
|
|
Microchip Technology |
220
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.0A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | 2 | IGBT，N-Channel，P-Channel MOSFET | 15ns，18ns |
