- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 33
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Diodes Incorporated |
21,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | Low-Side | IGBT，SiC MOSFET | 48ns，35ns | - | ||
|
|
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Diodes Incorporated |
23,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | Low-Side | IGBT，SiC MOSFET | 48ns，35ns | - | ||
|
|
|
Diodes Incorporated |
23,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | Low-Side | IGBT，SiC MOSFET | 48ns，35ns | - | ||
|
|
|
Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | Low-Side | IGBT，SiC MOSFET | 48ns，35ns | - | ||
|
|
|
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | Low-Side | IGBT，SiC MOSFET | 48ns，35ns | - | ||
|
|
|
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | Low-Side | IGBT，SiC MOSFET | 48ns，35ns | - | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | Automotive，AEC-Q101 | 25V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | 48ns，35ns | - | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | Automotive，AEC-Q101 | 25V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | 48ns，35ns | - | ||
|
|
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Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR IGBT/MOSFET SOT26
|
- | Automotive，AEC-Q101 | 25V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | 48ns，35ns | - | ||
|
|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC BUFFER GATE DRVR 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 13 V ~ 25 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | High-Side or Low-Side | IGBT | 50ns，50ns | - | ||
|
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Microchip Technology |
1,530
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A NON-INV 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
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ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 4ns，4ns | 1.5V，1.9V | |||
|
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ON Semiconductor |
3,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 4ns，4ns | 1.5V，1.9V | |||
|
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ON Semiconductor |
3,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8SOIC
|
- | - | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 4ns，4ns | 1.5V，1.9V | |||
|
|
Microchip Technology |
1,513
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 9A INV 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
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Microchip Technology |
377
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A NON-INV 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
260
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 9A INV 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
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ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 4ns，4ns | 1.5V，1.9V | |||
|
|
ON Semiconductor |
4,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
Cut Tape (CT) | - | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 4ns，4ns | 1.5V，1.9V | |||
|
|
ON Semiconductor |
4,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
- | - | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 4ns，4ns | 1.5V，1.9V |
