- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 14
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC BUFFER GATE DRVR 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 13 V ~ 25 V | -40°C ~ 150°C (TJ) | Non-Inverting | High-Side or Low-Side | IGBT | 50ns，50ns | - | ||
|
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Microchip Technology |
1,530
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A NON-INV 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 4ns，4ns | 1.5V，1.9V | |||
|
|
ON Semiconductor |
3,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 4ns，4ns | 1.5V，1.9V | |||
|
|
ON Semiconductor |
3,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8SOIC
|
- | - | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 4ns，4ns | 1.5V，1.9V | |||
|
|
Microchip Technology |
1,513
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 9A INV 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 4ns，4ns | - | |||
|
|
ON Semiconductor |
2,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 4ns，4ns | - | |||
|
|
ON Semiconductor |
2,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8SOIC
|
- | - | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 4ns，4ns | - | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRVR 9A N-INV 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
2,670
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 9A N-INV 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
2,670
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 9A N-INV 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER 9A INV 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
9A SNGL MOSFET DRVR
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 38ns，33ns | 0.8V，2.4V |
