Découvrez les produits 8
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
ZXGD3006E6TA
Diodes Incorporated
23,086
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Automotive,AEC-Q101 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Non-Inverting IGBT,SiC MOSFET 48ns,35ns -
ZXGD3006E6QTA
Diodes Incorporated
7,375
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
- 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Non-Inverting IGBT,SiC MOSFET 48ns,35ns -
ZXGD3005E6TA
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR IGBT/MOSFET SOT26
Automotive,AEC-Q101 25V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Non-Inverting IGBT,N-Channel MOSFET 48ns,35ns -
NCP81074ADR2G
ON Semiconductor
3,735
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 1CH 10A 8SOIC
- 4.5 V ~ 20 V -40°C ~ 140°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting N-Channel MOSFET 4ns,4ns 1.5V,1.9V
NCP81074AMNTBG
ON Semiconductor
4,238
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 1CH 10A 8DFN
- 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-VFDFN Exposed Pad 8-DFN (2x2) Inverting,Non-Inverting N-Channel MOSFET 4ns,4ns 1.5V,1.9V
NCP81074BDR2G
ON Semiconductor
2,375
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER 8SOIC
- 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting N-Channel MOSFET 4ns,4ns -
NCP81074BMNTBG
ON Semiconductor
2,162
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 1CH 10A 8DFN
- 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 8-VFDFN Exposed Pad 8-DFN (2x2) Inverting,Non-Inverting N-Channel MOSFET 4ns,4ns -
TC4422AVOA713
Microchip Technology
2,670
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 9A N-INV 8SOIC
- 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting IGBT,N-Channel,P-Channel MOSFET 38ns,33ns 0.8V,2.4V