- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Input Type:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 8
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Diodes Incorporated |
23,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Automotive,AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | IGBT,SiC MOSFET | 48ns,35ns | - | ||||
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | IGBT,SiC MOSFET | 48ns,35ns | - | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR IGBT/MOSFET SOT26
|
Automotive,AEC-Q101 | 25V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Non-Inverting | IGBT,N-Channel MOSFET | 48ns,35ns | - | ||||
ON Semiconductor |
3,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8SOIC
|
- | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | N-Channel MOSFET | 4ns,4ns | 1.5V,1.9V | ||||
ON Semiconductor |
4,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Inverting,Non-Inverting | N-Channel MOSFET | 4ns,4ns | 1.5V,1.9V | ||||
ON Semiconductor |
2,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8SOIC
|
- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | N-Channel MOSFET | 4ns,4ns | - | ||||
ON Semiconductor |
2,162
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Inverting,Non-Inverting | N-Channel MOSFET | 4ns,4ns | - | ||||
Microchip Technology |
2,670
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 9A N-INV 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 38ns,33ns | 0.8V,2.4V |