- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 43
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
2,442
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
- | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-DSO | Non-Inverting | Independent | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 48ns，24ns | - | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR 600V 3PHASE 28TSSOP
|
Tape & Reel (TR) | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173"，4.40mm Width) | PG-TSSOP-28 | Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 620V | 60ns，26ns | - | ||
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|
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Infineon Technologies |
1,843
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR 600V 3PHASE 28TSSOP
|
Cut Tape (CT) | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173"，4.40mm Width) | PG-TSSOP-28 | Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 620V | 60ns，26ns | - | ||
|
|
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Infineon Technologies |
1,843
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 600V 3PHASE 28TSSOP
|
- | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173"，4.40mm Width) | PG-TSSOP-28 | Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 620V | 60ns，26ns | - | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
Tape & Reel (TR) | 10 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-TSSOP-28 | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 620V | 60ns，26ns | - | ||
|
|
|
Infineon Technologies |
995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
Cut Tape (CT) | 10 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-TSSOP-28 | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 620V | 60ns，26ns | - | ||
|
|
|
Infineon Technologies |
995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
- | 10 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-TSSOP-28 | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 620V | 60ns，26ns | - | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28DSO
|
Tape & Reel (TR) | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-DSO-28-17 | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 60ns，26ns | - | ||
|
|
|
Infineon Technologies |
524
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28DSO
|
Cut Tape (CT) | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-DSO-28-17 | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 60ns，26ns | - | ||
|
|
|
Infineon Technologies |
524
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28DSO
|
- | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-DSO-28-17 | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 60ns，26ns | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
Tape & Reel (TR) | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-DSO-28 | Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 620V | 60ns，26ns | - | ||
|
|
|
Infineon Technologies |
736
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
Cut Tape (CT) | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-DSO-28 | Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 620V | 60ns，26ns | - | ||
|
|
|
Infineon Technologies |
736
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
- | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-DSO-28 | Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 620V | 60ns，26ns | - | ||
|
|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR 200V 3PHASE 28TSSOP
|
Tape & Reel (TR) | 10 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173"，4.40mm Width) | PG-TSSOP-28 | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 200V | 60ns，26ns | - | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR 200V 3PHASE 28TSSOP
|
Cut Tape (CT) | 10 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173"，4.40mm Width) | PG-TSSOP-28 | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 200V | 60ns，26ns | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 200V 3PHASE 28TSSOP
|
- | 10 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173"，4.40mm Width) | PG-TSSOP-28 | Non-Inverting | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 200V | 60ns，26ns | - | ||
|
|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | Non-Inverting | Independent | 2 | IGBT | 600V | 48ns，24ns | 500mA，500mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | Non-Inverting | Independent | 2 | IGBT | 600V | 48ns，24ns | 500mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | Non-Inverting | Independent | 2 | IGBT | 600V | 48ns，24ns | 500mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 3-PH 600V DIE
|
Bulk | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | Die | Chip | Non-Inverting | 3-Phase | 6 | IGBT | 600V | 60ns，26ns | - |
