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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Mounting Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 98
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER HALF BRIDGE 8SOIC
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- | Automotive，AEC-Q100 | 5.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，25ns | 300mA，600mA | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 9500 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8SOIC
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Tube | Automotive，AEC-Q100 | 5.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，25ns | 300mA，600mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 380 MPQ: 1
|
IC DRIVER LOW SIDE DUAL 8SOIC
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Tube | Automotive，AEC-Q100 | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，25ns | 2.3A，3.3A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 380 MPQ: 1
|
IC DRIVER LOW SIDE DUAL 8SOIC
|
Tube | Automotive，AEC-Q100 | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，25ns | 2.3A，3.3A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 380 MPQ: 1
|
IC DRVR LSOW SIDE DUAL 8SOIC
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Tube | Automotive，AEC-Q100 | 4.8 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，25ns | 2.3A，3.3A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
|
Tape & Reel (TR) | - | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | N-Channel MOSFET | 200V | 8ns，7ns | 4A，4A | |||
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ON Semiconductor |
2,272
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
|
Cut Tape (CT) | - | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | N-Channel MOSFET | 200V | 8ns，7ns | 4A，4A | |||
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ON Semiconductor |
2,272
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
|
- | - | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | N-Channel MOSFET | 200V | 8ns，7ns | 4A，4A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 5.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，25ns | 300mA，600mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 5.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，25ns | 300mA，600mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8SOIC
|
- | Automotive，AEC-Q100 | 5.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，25ns | 300mA，600mA | |||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC DUAL MOSFET IGBT 8-DIP
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 15ns，10ns | 2.3A，3.3A | ||
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 9500 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8SOIC
|
Tube | Automotive，AEC-Q100 | 5.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，25ns | 300mA，600mA | |||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 50 MPQ: 1
|
IC DRIVER HIGH/LOW DRIVER 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A | ||
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|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 5.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，25ns | 300mA，600mA | |||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 4000 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
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- | - | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (4x4) | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | N-Channel MOSFET | 200V | 8ns，7ns | 4A，4A | |||
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|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
|
- | - | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WDFN (4x4) | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | N-Channel MOSFET | 200V | 8ns，7ns | 4A，4A |
