- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 17
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
25,232
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
18,225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
18,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE DL 8MSOP
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
5,209
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8MSOP
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
7,114
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
STMicroelectronics |
4,120
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH CURR 8SOIC
|
- | 5 V ~ 12 V | 0°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 41V | - | 2A，2A | ||
|
|
|
Texas Instruments |
7,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
3,211
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
2,905
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
1,649
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8MSOP
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
1,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
5,315
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
2,474
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8SOIC
|
Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
979
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
460
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 8MSOP
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
118
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A |
