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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 57
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
1
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3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 4A，4A | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 6-WDFN Exposed Pad | 6-SON-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 4A，4A | ||
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|
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Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 9 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 2.5A，2.5A | ||
|
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 9 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 2.5A，2.5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 6-WDFN Exposed Pad | 6-SON-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 4A，8A | ||
|
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 9 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 115V | 12ns，9ns | 2.5A，2.5A | ||
|
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 15ns，9ns | - | ||
|
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 9 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 2.5A，2.5A | ||
|
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 2.5A，2.5A | ||
|
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC GATE DRIVER
|
Tube | - | 9 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 2.5A，2.5A | ||
|
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC GATE DRIVER
|
Tube | - | 9 V ~ 16 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 2.5A，2.5A | ||
|
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC GATE DRIVER
|
Tube | - | 9 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 115V | 12ns，9ns | 2.5A，2.5A | ||
|
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC GATE DRIVER
|
Tube | - | 9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 15ns，9ns | - | ||
|
|
Monolithic Power Systems Inc. |
2,000
|
3 jours |
-
|
MOQ: 500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 2.5A，2.5A | |||
|
|
Monolithic Power Systems Inc. |
2,282
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 2.5A，2.5A | |||
|
|
Monolithic Power Systems Inc. |
2,282
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 2.5A，2.5A | |||
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 2.5A，2.5A |
