- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 59
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
15,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER LOW SIDE 1.5A SOT23-5
|
Tape & Reel (TR) | μHVIC | 10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 25ns,25ns | 1.5A,1.5A | ||||
Infineon Technologies |
15,397
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER LOW SIDE 1.5A SOT23-5
|
Cut Tape (CT) | μHVIC | 10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 25ns,25ns | 1.5A,1.5A | ||||
Infineon Technologies |
15,397
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER LOW SIDE 1.5A SOT23-5
|
- | μHVIC | 10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 25ns,25ns | 1.5A,1.5A | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
Tape & Reel (TR) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 25ns,25ns | 2.3A,3.3A | ||||
Infineon Technologies |
9,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
Cut Tape (CT) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 25ns,25ns | 2.3A,3.3A | ||||
Infineon Technologies |
9,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
- | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 25ns,25ns | 2.3A,3.3A | ||||
STMicroelectronics |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DUAL 8SOIC
|
Tape & Reel (TR) | - | 5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 45ns,35ns | 4A,4A | ||||
STMicroelectronics |
2,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL 8SOIC
|
Cut Tape (CT) | - | 5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 45ns,35ns | 4A,4A | ||||
STMicroelectronics |
2,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL 8SOIC
|
- | - | 5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 45ns,35ns | 4A,4A | ||||
Infineon Technologies |
2,720
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE 25V 8-SOIC
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 25ns,25ns | 2.3A,3.3A | ||||
Maxim Integrated |
1,900
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HS 10-TDFN
|
Strip | - | 4.5 V ~ 6.5 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 14ns,9ns | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IR_HSS-LSS-GATEDRIVER
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 3 V ~ 36 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | - | - | High-Side | 1 | - | 6μs,6μs | - | ||||
Infineon Technologies |
1,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IR_HSS-LSS-GATEDRIVER
|
Cut Tape (CT) | Automotive,AEC-Q100 | 3 V ~ 36 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | - | - | High-Side | 1 | - | 6μs,6μs | - | ||||
Infineon Technologies |
1,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IR_HSS-LSS-GATEDRIVER
|
- | Automotive,AEC-Q100 | 3 V ~ 36 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | - | - | High-Side | 1 | - | 6μs,6μs | - | ||||
IXYS Integrated Circuits Division |
831
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
5-AMP DUAL LOW-SIDE MOSFET DRIVE
|
Tube | - | 5 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 7ns,7ns | 5A,5A | ||||
Infineon Technologies |
597
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8-SOIC
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 25ns,25ns | 2.3A,3.3A | ||||
Maxim Integrated |
32
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HS 10-UMAX
|
Tube | - | 4.5 V ~ 6.5 V | -40°C ~ 150°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) | 10-uMAX | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 14ns,9ns | - | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR 4A DUAL 8SOIC
|
Tube | - | 5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 45ns,35ns | 4A,4A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
IC DVR LOW SIDE 25V 8-SOIC
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 25ns,25ns | 2.3A,3.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR LOW SIDE DUAL 8-SOIC
|
Tape & Reel (TR) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 25ns,25ns | 2.3A,3.3A |