- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 59
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
42,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 4A,4A | ||||
ON Semiconductor |
43,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 4A,4A | ||||
ON Semiconductor |
43,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 4A,4A | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 290mA,600mA | ||||
Infineon Technologies |
10,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Cut Tape (CT) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 290mA,600mA | ||||
Infineon Technologies |
10,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
- | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 290mA,600mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Tape & Reel (TR) | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 290mA,600mA | ||||
Infineon Technologies |
4,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Cut Tape (CT) | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 290mA,600mA | ||||
Infineon Technologies |
4,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
- | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 290mA,600mA | ||||
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 4A,4A | ||||
ON Semiconductor |
4,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 4A,4A | ||||
ON Semiconductor |
4,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
- | Automotive,AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 4A,4A | ||||
ON Semiconductor |
1,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tube | Automotive,AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 4A,4A | ||||
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER GATE HIGH SIDE 8SOP
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 4A,4A | ||||
ON Semiconductor |
8,977
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HIGH SIDE 8SOP
|
Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 4A,4A | ||||
ON Semiconductor |
8,977
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HIGH SIDE 8SOP
|
- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 4A,4A | ||||
Infineon Technologies |
8,170
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8SOIC
|
Tube | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 290mA,600mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HIGH SIDE 1CH 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 70ns,30ns | 250mA,500mA | ||||
ON Semiconductor |
2,478
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 1CH 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 70ns,30ns | 250mA,500mA | ||||
ON Semiconductor |
2,478
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 1CH 8-SOIC
|
- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | IGBT,N-Channel MOSFET | 600V | 70ns,30ns | 250mA,500mA |