- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Conditions sélectionnées:
Découvrez les produits 381
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 200V | 70ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
7,943
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 200V | 70ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
7,943
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 200V | 70ns,35ns | 290mA,600mA | ||||
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOP | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 60ns,30ns | 350mA,650mA | ||||
ON Semiconductor |
9,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOP | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 60ns,30ns | 350mA,650mA | ||||
ON Semiconductor |
9,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOP | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 60ns,30ns | 350mA,650mA | ||||
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
12,190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
12,190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
11,887
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
11,887
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 290mA,600mA | ||||
ON Semiconductor |
27,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 2.5A,2.5A | ||||
ON Semiconductor |
29,499
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 2.5A,2.5A | ||||
ON Semiconductor |
29,499
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 2.5A,2.5A | ||||
Infineon Technologies |
17,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 4A,4A | ||||
Infineon Technologies |
19,926
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 4A,4A | ||||
Infineon Technologies |
19,926
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 4A,4A | ||||
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 290mA,600mA | ||||
Infineon Technologies |
5,487
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 290mA,600mA |