- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 89
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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|
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Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 290mA，600mA | ||
|
|
|
Infineon Technologies |
7,943
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 290mA，600mA | ||
|
|
|
Infineon Technologies |
7,943
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 290mA，600mA | ||
|
|
|
ON Semiconductor |
27,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 2.5A，2.5A | ||
|
|
|
ON Semiconductor |
29,499
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 2.5A，2.5A | ||
|
|
|
ON Semiconductor |
29,499
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 2.5A，2.5A | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 290mA，600mA | ||
|
|
|
Infineon Technologies |
5,487
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 290mA，600mA | ||
|
|
|
Infineon Technologies |
5,487
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 290mA，600mA | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | N-Channel MOSFET | 200V | 70ns，30ns | 290mA，600mA | ||
|
|
|
Infineon Technologies |
5,651
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | N-Channel MOSFET | 200V | 70ns，30ns | 290mA，600mA | ||
|
|
|
Infineon Technologies |
5,651
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | N-Channel MOSFET | 200V | 70ns，30ns | 290mA，600mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR HALF-BRIDGE SHTDN 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 290mA，600mA | ||
|
|
|
Infineon Technologies |
4,981
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF-BRIDGE SHTDN 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 290mA，600mA | ||
|
|
|
Infineon Technologies |
4,981
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF-BRIDGE SHTDN 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HV SO8
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
4,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
4,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 290mA，600mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
2,536
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 1.9A，2.3A |
