- Packaging：
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- Voltage - Supply：
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- Supplier Device Package：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 10
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Supplier Device Package | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Supplier Device Package | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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|
|
Maxim Integrated |
1,900
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HS 10-TDFN
|
Strip | 4.5 V ~ 6.5 V | 10-TDFN (3x3) | Synchronous | N-Channel MOSFET | - | 14ns，9ns | - | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
Tape & Reel (TR) | 10 V ~ 20 V | W-DFN3030-10 | Independent | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,647
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
Cut Tape (CT) | 10 V ~ 20 V | W-DFN3030-10 | Independent | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,647
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
- | 10 V ~ 20 V | W-DFN3030-10 | Independent | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
Tape & Reel (TR) | 10 V ~ 20 V | W-DFN3030-10 | Synchronous | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
Cut Tape (CT) | 10 V ~ 20 V | W-DFN3030-10 | Synchronous | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
- | 10 V ~ 20 V | W-DFN3030-10 | Synchronous | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 290mA，600mA | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET HS 10-TDFN
|
Tape & Reel (TR) | 4.5 V ~ 6.5 V | 10-TDFN (3x3) | Synchronous | N-Channel MOSFET | - | 14ns，9ns | - | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HS 10-TDFN
|
Cut Tape (CT) | 4.5 V ~ 6.5 V | 10-TDFN-EP (3x3) | Synchronous | N-Channel MOSFET | - | 14ns，9ns | - | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HS 10-TDFN
|
- | 4.5 V ~ 6.5 V | 10-TDFN-EP (3x3) | Synchronous | N-Channel MOSFET | - | 14ns，9ns | - |
