Fabricant:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 40
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
FAN7171MX-F085
ON Semiconductor
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DVR HIGH SIDE 8-SOIC
Tape & Reel (TR) 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 25ns,15ns 4A,4A
FAN7171MX-F085
ON Semiconductor
4,990
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HIGH SIDE 8-SOIC
Cut Tape (CT) 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 25ns,15ns 4A,4A
FAN7171MX-F085
ON Semiconductor
4,990
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HIGH SIDE 8-SOIC
- 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 25ns,15ns 4A,4A
FAN7171M-F085
ON Semiconductor
1,469
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HIGH SIDE 8-SOIC
Tube 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 25ns,15ns 4A,4A
UCC27201AQDDARQ1
Texas Instruments
12,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DVR HIGH/LOW SIDE 3A 8SOPWR
Tape & Reel (TR) 8 V ~ 17 V -40°C ~ 140°C (TJ) 8-PowerSOIC (0.154",3.90mm Width) 8-SO PowerPad Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 120V 8ns,7ns 3A,3A
UCC27201AQDDARQ1
Texas Instruments
16,709
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HIGH/LOW SIDE 3A 8SOPWR
Cut Tape (CT) 8 V ~ 17 V -40°C ~ 140°C (TJ) 8-PowerSOIC (0.154",3.90mm Width) 8-SO PowerPad Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 120V 8ns,7ns 3A,3A
UCC27201AQDDARQ1
Texas Instruments
16,709
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HIGH/LOW SIDE 3A 8SOPWR
- 8 V ~ 17 V -40°C ~ 140°C (TJ) 8-PowerSOIC (0.154",3.90mm Width) 8-SO PowerPad Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 120V 8ns,7ns 3A,3A
UCC27201AQDMKRQ1
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR HIGH/LOW SIDE 3A 8SOPWR
Tape & Reel (TR) 8 V ~ 17 V -40°C ~ 140°C (TJ) 10-VDFN Exposed Pad 10-VSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 120V 8ns,7ns 3A,3A
UCC27201AQDMKRQ1
Texas Instruments
1,716
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HIGH/LOW SIDE 3A 8SOPWR
Cut Tape (CT) 8 V ~ 17 V -40°C ~ 140°C (TJ) 10-VDFN Exposed Pad 10-VSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 120V 8ns,7ns 3A,3A
UCC27201AQDMKRQ1
Texas Instruments
1,716
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HIGH/LOW SIDE 3A 8SOPWR
- 8 V ~ 17 V -40°C ~ 140°C (TJ) 10-VDFN Exposed Pad 10-VSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 120V 8ns,7ns 3A,3A
AUIRS21271STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
Tape & Reel (TR) 9 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 290mA,600mA
AUIRS21271STR
Infineon Technologies
2,474
3 jours
-
MOQ: 1  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
Cut Tape (CT) 9 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 290mA,600mA
AUIRS21271STR
Infineon Technologies
2,474
3 jours
-
MOQ: 1  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
- 9 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 290mA,600mA
AUIR3241STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IR_HSS-LSS-GATEDRIVER
Tape & Reel (TR) 3 V ~ 36 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO - - High-Side 1 - - 6μs,6μs -
AUIR3241STR
Infineon Technologies
1,772
3 jours
-
MOQ: 1  MPQ: 1
IR_HSS-LSS-GATEDRIVER
Cut Tape (CT) 3 V ~ 36 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO - - High-Side 1 - - 6μs,6μs -
AUIR3241STR
Infineon Technologies
1,772
3 jours
-
MOQ: 1  MPQ: 1
IR_HSS-LSS-GATEDRIVER
- 3 V ~ 36 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO - - High-Side 1 - - 6μs,6μs -
AUIRS2301STR
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
Tape & Reel (TR) 5 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 130ns,50ns 200mA,350mA
AUIRS2301STR
Infineon Technologies
2,500
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
Cut Tape (CT) 5 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 130ns,50ns 200mA,350mA
AUIRS2301STR
Infineon Technologies
2,500
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
- 5 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 130ns,50ns 200mA,350mA
AUIRS2127STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
Tape & Reel (TR) 12 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 290mA,600mA