- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 40
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 4A,4A | ||||
ON Semiconductor |
4,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 4A,4A | ||||
ON Semiconductor |
4,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 4A,4A | ||||
ON Semiconductor |
1,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tube | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 4A,4A | ||||
Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Tape & Reel (TR) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 3A,3A | ||||
Texas Instruments |
16,709
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Cut Tape (CT) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 3A,3A | ||||
Texas Instruments |
16,709
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 3A,3A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Tape & Reel (TR) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VDFN Exposed Pad | 10-VSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 3A,3A | ||||
Texas Instruments |
1,716
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Cut Tape (CT) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VDFN Exposed Pad | 10-VSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 3A,3A | ||||
Texas Instruments |
1,716
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VDFN Exposed Pad | 10-VSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 3A,3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8SOIC
|
Tape & Reel (TR) | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 290mA,600mA | ||||
Infineon Technologies |
2,474
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8SOIC
|
Cut Tape (CT) | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 290mA,600mA | ||||
Infineon Technologies |
2,474
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8SOIC
|
- | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IR_HSS-LSS-GATEDRIVER
|
Tape & Reel (TR) | 3 V ~ 36 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | - | - | High-Side | 1 | - | - | 6μs,6μs | - | ||||
Infineon Technologies |
1,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IR_HSS-LSS-GATEDRIVER
|
Cut Tape (CT) | 3 V ~ 36 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | - | - | High-Side | 1 | - | - | 6μs,6μs | - | ||||
Infineon Technologies |
1,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IR_HSS-LSS-GATEDRIVER
|
- | 3 V ~ 36 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | - | - | High-Side | 1 | - | - | 6μs,6μs | - | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tape & Reel (TR) | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | - | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Cut Tape (CT) | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | - | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | - | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8SOIC
|
Tape & Reel (TR) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 290mA,600mA |