- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Conditions sélectionnées:
Découvrez les produits 507
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
1,107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 10WSON
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 15ns,10ns | 1.2A,1.8A | ||||
Texas Instruments |
1,107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 10WSON
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 15ns,10ns | 1.2A,1.8A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8WSON
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns,15ns | 1A,1A | ||||
Texas Instruments |
1,955
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8WSON
|
Cut Tape (CT) | Automotive,AEC-Q100 | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns,15ns | 1A,1A | ||||
Texas Instruments |
1,955
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8WSON
|
- | Automotive,AEC-Q100 | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns,15ns | 1A,1A | ||||
Renesas Electronics America Inc. |
1,303
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 80V 8-SOIC
|
Tube | - | 9 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 80V | 5ns,5ns | 1.4A,1.3A | ||||
Infineon Technologies |
7,607
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER LOW SIDE 8DIP
|
Tube | - | 12 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 43ns,26ns | 1.6A,3.3A | ||||
Texas Instruments |
224
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL CH PWR DRIVER 16-SOIC
|
Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns,40ns | 1.5A,1.5A | ||||
Texas Instruments |
561
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT PWR DRVR TO-220-5
|
Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | TO-220-5 | TO-220-5 | Through Hole | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns,60ns | 2A,2A | ||||
Texas Instruments |
220
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENTARY PWR DRVR 16-DIP
|
Tube | - | 5 V ~ 40 V | -25°C ~ 85°C (TA) | 16-DIP (0.300",7.62mm) | 16-PDIP | Through Hole | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns,40ns | 1.5A,1.5A | ||||
Texas Instruments |
133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENTARY PWR DRVR 8-DIP
|
Tube | - | 5 V ~ 40 V | -25°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns,60ns | 1.5A,1.5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 200V SOT23
|
Tape & Reel (TR) | μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 200V | 85ns,40ns | 160mA,240mA | ||||
Infineon Technologies |
2,505
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 200V SOT23
|
Cut Tape (CT) | μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 200V | 85ns,40ns | 160mA,240mA | ||||
Infineon Technologies |
2,505
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 200V SOT23
|
- | μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 200V | 85ns,40ns | 160mA,240mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 85ns,30ns | 220mA,480mA | ||||
Infineon Technologies |
2,366
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 85ns,30ns | 220mA,480mA | ||||
Infineon Technologies |
2,366
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 85ns,30ns | 220mA,480mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 250mA,500mA | ||||
Infineon Technologies |
872
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 250mA,500mA | ||||
Infineon Technologies |
872
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 250mA,500mA |