- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Conditions sélectionnées:
Découvrez les produits 507
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
1,899
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
- | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 20ns,20ns | 1A,1A | ||||
Microchip Technology |
1,000
|
3 jours |
-
|
MOQ: 500 MPQ: 1
|
IC DRIVER MOSFET 85V 8-SOIC
|
Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns,20ns | 1.5A,1A | ||||
Microchip Technology |
1,067
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 85V 8-SOIC
|
Cut Tape (CT) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns,20ns | 1.5A,1A | ||||
Microchip Technology |
1,067
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 85V 8-SOIC
|
- | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns,20ns | 1.5A,1A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET 100V 8-SOIC
|
Tape & Reel (TR) | - | 9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 330ns,200ns | 2A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16TSSOP
|
Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-TSSOP (0.173",4.40mm Width) | 16-TSSOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns,20ns | 1A,1A | ||||
Microchip Technology |
2,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16TSSOP
|
Cut Tape (CT) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-TSSOP (0.173",4.40mm Width) | 16-TSSOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns,20ns | 1A,1A | ||||
Microchip Technology |
2,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16TSSOP
|
- | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-TSSOP (0.173",4.40mm Width) | 16-TSSOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns,20ns | 1A,1A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 600V | 20ns,20ns | 1A,1A | ||||
Microchip Technology |
275
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 600V | 20ns,20ns | 1A,1A | ||||
Microchip Technology |
275
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 600V | 20ns,20ns | 1A,1A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DVR 85V FULL BRIDGE
|
Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (4x4) | Surface Mount | Inverting,Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns,20ns | 1A,1A | ||||
Microchip Technology |
327
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V FULL BRIDGE
|
Cut Tape (CT) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (4x4) | Surface Mount | Inverting,Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns,20ns | 1A,1A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DVR 85V FULL BRIDGE
|
Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-VQFN Exposed Pad | 16-QFN (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns,20ns | 1A,1A | ||||
Microchip Technology |
236
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V FULL BRIDGE
|
Cut Tape (CT) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-VQFN Exposed Pad | 16-QFN (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns,20ns | 1A,1A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16TSSOP
|
Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-SSOP (0.154",3.90mm Width) | 16-TSSOP | Surface Mount | Inverting,Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns,20ns | 1A,1A | ||||
Microchip Technology |
424
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16TSSOP
|
Cut Tape (CT) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-SSOP (0.154",3.90mm Width) | 16-TSSOP | Surface Mount | Inverting,Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns,20ns | 1A,1A | ||||
Microchip Technology |
424
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16TSSOP
|
- | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-SSOP (0.154",3.90mm Width) | 16-TSSOP | Surface Mount | Inverting,Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns,20ns | 1A,1A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSF DVR 85V SGL PWM 28TSSOP
|
Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173",4.40mm Width) | 28-TSSOP | Surface Mount | Inverting,Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 108V | 20ns,20ns | 1A,1A | ||||
Microchip Technology |
257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DVR 85V SGL PWM 28TSSOP
|
Cut Tape (CT) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173",4.40mm Width) | 28-TSSOP | Surface Mount | Inverting,Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 108V | 20ns,20ns | 1A,1A |