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Découvrez les produits 507
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
IRS2608DSTRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC DRIVER MOSFET/IGBT 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 200mA,350mA
IRS2608DSTRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC DRIVER MOSFET/IGBT 8-SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 200mA,350mA
IR2135PBF
Infineon Technologies
Enquête
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MOQ: 52  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
Tube - 10 V ~ 20 V 125°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Through Hole Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 90ns,40ns 250mA,500mA
IRS2608DSPBF
Infineon Technologies
Enquête
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MOQ: 380  MPQ: 1
IC DVR HALF BRIDGE 600V 8-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 200mA,350mA
IRS2609DSPBF
Infineon Technologies
Enquête
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MOQ: 380  MPQ: 1
IC DVR MOSFET/IGBT N-CH 8-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 200mA,350mA
IRS2607DSTRPBF
Infineon Technologies
Enquête
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MOQ: 2500  MPQ: 1
IC DVR MOSFET/IGBT N-CH 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 200mA,350mA
IRS2607DSTRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC DVR MOSFET/IGBT N-CH 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 200mA,350mA
IRS2607DSTRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC DVR MOSFET/IGBT N-CH 8-SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 200mA,350mA
IRS2332DJTRPBF
Infineon Technologies
Enquête
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MOQ: 500  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 250mA,500mA
IRS2332DJTRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 250mA,500mA
IRS2332DJTRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 250mA,500mA
IRS2330JTRPBF
Infineon Technologies
Enquête
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MOQ: 500  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 250mA,500mA
IRS2330JTRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 250mA,500mA
IRS2330JTRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 250mA,500mA
IRS2332JTRPBF
Infineon Technologies
Enquête
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MOQ: 500  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 250mA,500mA
IRS2332JTRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 250mA,500mA
IRS2332JTRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 250mA,500mA
NCV7510DWR2G
ON Semiconductor
Enquête
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MOQ: 1000  MPQ: 1
IC PREDRIVER FLEXMOS 20-SOIC
Tape & Reel (TR) FLEXMOS 4.75 V ~ 5.25 V -40°C ~ 125°C (TJ) 20-SOIC (0.295",7.50mm Width) 20-SOIC Surface Mount Non-Inverting Single High-Side 1 N-Channel MOSFET 50V - -
IRS2330DSPBF
Infineon Technologies
Enquête
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MOQ: 125  MPQ: 1
IC BRIDGE DVR 3PH 600V 28-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 250mA,500mA
IRS2330SPBF
Infineon Technologies
Enquête
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MOQ: 125  MPQ: 1
IC BRIDGE DVR 3PH 600V 28-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 250mA,500mA