Découvrez les produits 7
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Applications Voltage - Supply Package / Case Supplier Device Package Features Technology Current - Output / Channel Fault Protection Output Configuration Load Type Voltage - Load
IRS2007STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
HVIC
Tape & Reel (TR) Battery Powered 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC - Power MOSFET 600mA - Half Bridge (2) - 200V
IRS2007STRPBF
Infineon Technologies
2,455
3 jours
-
MOQ: 1  MPQ: 1
HVIC
Cut Tape (CT) Battery Powered 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC - Power MOSFET 600mA - Half Bridge (2) - 200V
IRS2007STRPBF
Infineon Technologies
2,455
3 jours
-
MOQ: 1  MPQ: 1
HVIC
- Battery Powered 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC - Power MOSFET 600mA - Half Bridge (2) - 200V
BS2130F-GE2
ROHM Semiconductor
Enquête
-
-
MOQ: 1500  MPQ: 1
600V HIGH VOLTAGE 3 PHASE BRIDGE
Tape & Reel (TR) General Purpose 11.5 V ~ 20 V 28-SOIC (0.295",7.50mm Width) 28-SOP Bootstrap Circuit Power MOSFET,IGBT 350mA Current Limiting,UVLO Half Bridge (6) Inductive,Capacitive 600V (Max)
BS2130F-GE2
ROHM Semiconductor
1,405
3 jours
-
MOQ: 1  MPQ: 1
600V HIGH VOLTAGE 3 PHASE BRIDGE
Cut Tape (CT) General Purpose 11.5 V ~ 20 V 28-SOIC (0.295",7.50mm Width) 28-SOP Bootstrap Circuit Power MOSFET,IGBT 350mA Current Limiting,UVLO Half Bridge (6) Inductive,Capacitive 600V (Max)
BS2130F-GE2
ROHM Semiconductor
1,405
3 jours
-
MOQ: 1  MPQ: 1
600V HIGH VOLTAGE 3 PHASE BRIDGE
- General Purpose 11.5 V ~ 20 V 28-SOIC (0.295",7.50mm Width) 28-SOP Bootstrap Circuit Power MOSFET,IGBT 350mA Current Limiting,UVLO Half Bridge (6) Inductive,Capacitive 600V (Max)
IRS2007SPBF
Infineon Technologies
Enquête
-
-
MOQ: 3800  MPQ: 1
HVIC
Tube Battery Powered 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC - Power MOSFET 600mA - Half Bridge (2) - 200V