- Packaging：
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- Interface：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Features：
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- Technology：
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- Fault Protection：
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- Output Configuration：
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- Rds On (Typ)：
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- Conditions sélectionnées:
Découvrez les produits 18
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Interface | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Features | Technology | Current - Output / Channel | Fault Protection | Output Configuration | Rds On (Typ) | Current - Peak Output | Voltage - Load | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Interface | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Features | Technology | Current - Output / Channel | Fault Protection | Output Configuration | Rds On (Typ) | Current - Peak Output | Voltage - Load | |
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EPC |
500
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3 jours |
-
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MOQ: 500 MPQ: 1
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150 V GAN IC DUAL FET DRIVER
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Tape & Reel (TR) | - | On/Off | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 10-VFBGA | 10-BGA (2.9x1.1) | Surface Mount | - | MOSFET (Metal Oxide) | 5A | - | Low Side | 70 mOhm | 18A | 4.5 V ~ 5.5 V | ||
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EPC |
883
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3 jours |
-
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MOQ: 1 MPQ: 1
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150 V GAN IC DUAL FET DRIVER
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Cut Tape (CT) | - | On/Off | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 10-VFBGA | 10-BGA (2.9x1.1) | Surface Mount | - | MOSFET (Metal Oxide) | 5A | - | Low Side | 70 mOhm | 18A | 4.5 V ~ 5.5 V | ||
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EPC |
883
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3 jours |
-
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MOQ: 1 MPQ: 1
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150 V GAN IC DUAL FET DRIVER
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- | - | On/Off | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 10-VFBGA | 10-BGA (2.9x1.1) | Surface Mount | - | MOSFET (Metal Oxide) | 5A | - | Low Side | 70 mOhm | 18A | 4.5 V ~ 5.5 V | ||
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EPC |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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200 V GAN IC FET DRIVER
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Tape & Reel (TR) | - | On/Off | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 10-XFBGA | 10-BGA (2.9x1.1) | Surface Mount | - | MOSFET (Metal Oxide) | 10A | - | Low Side | 32 mOhm | 40A | 4.5 V ~ 5.5 V | ||
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EPC |
677
|
3 jours |
-
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MOQ: 1 MPQ: 1
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200 V GAN IC FET DRIVER
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Cut Tape (CT) | - | On/Off | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 10-XFBGA | 10-BGA (2.9x1.1) | Surface Mount | - | MOSFET (Metal Oxide) | 10A | - | Low Side | 32 mOhm | 40A | 4.5 V ~ 5.5 V | ||
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EPC |
677
|
3 jours |
-
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MOQ: 1 MPQ: 1
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200 V GAN IC FET DRIVER
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- | - | On/Off | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 10-XFBGA | 10-BGA (2.9x1.1) | Surface Mount | - | MOSFET (Metal Oxide) | 10A | - | Low Side | 32 mOhm | 40A | 4.5 V ~ 5.5 V | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC PIEZO ACTUATOR DVR 24MLP
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Tape & Reel (TR) | - | Logic | 2.7 V ~ 5.5 V | -55°C ~ 150°C (TJ) | 24-WFQFN Exposed Pad | 24-MLP (4x4) | Surface Mount | - | Power MOSFET | - | ESD，Over Voltage，UVLO | Half Bridge (2) | - | - | 13 V ~ 60 V | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC PIEZO ACTUATOR DVR 24MLP
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Cut Tape (CT) | - | Logic | 2.7 V ~ 5.5 V | -55°C ~ 150°C (TJ) | 24-WFQFN Exposed Pad | 24-MLP (4x4) | Surface Mount | - | Power MOSFET | - | ESD，Over Voltage，UVLO | Half Bridge (2) | - | - | 13 V ~ 60 V | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC PIEZO ACTUATOR DVR 24MLP
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- | - | Logic | 2.7 V ~ 5.5 V | -55°C ~ 150°C (TJ) | 24-WFQFN Exposed Pad | 24-MLP (4x4) | Surface Mount | - | Power MOSFET | - | ESD，Over Voltage，UVLO | Half Bridge (2) | - | - | 13 V ~ 60 V | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC PWR MODULE DRMOS 40A 40QFN
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Tape & Reel (TR) | - | PWM | 4.75 V ~ 5.25 V | -40°C ~ 125°C (TJ) | 40-VFQFN Exposed Pad | 40-QFN (6x6) | Surface Mount | Bootstrap Circuit，Diode Emulation，Status Flag | DrMOS | 40A | Over Temperature，Shoot-Through，UVLO | Half Bridge | - | - | 4.5 V ~ 18 V | ||
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ROHM Semiconductor |
Enquête
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- |
-
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MOQ: 1500 MPQ: 1
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IC MOTOR DRIVER PAR 48VQFPC
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Tape & Reel (TR) | - | Logic | 1.5 V ~ 4.5 V | -10°C ~ 70°C (TA) | 48-LQFP | 48-VQFPC (7x7) | Surface Mount | Slew Rate Controlled | Power MOSFET | 3A | Short Circuit | Half Bridge (8) | - | - | 1.5 V ~ 4.5 V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER DUAL HS MOSFET 8DSO
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Tape & Reel (TR) | - | PWM | 10.8 V ~ 13.2 V | -25°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | Surface Mount | Bootstrap Circuit | Power MOSFET | - | Over Temperature，UVLO | Half Bridge | - | 4A | 5 V ~ 13.2 V | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER DUAL HS MOSFET PDSO-14
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Tape & Reel (TR) | CoreControl | PWM | 10.8 V ~ 13.2 V | -25°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | PG-DSO-14 | Surface Mount | Bootstrap Circuit | Power MOSFET | - | Shoot-Through，UVLO | Half Bridge (2) | 1.4 Ohm LS，1 Ohm HS | 4A | 5 V ~ 13.2 V | ||
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ON Semiconductor |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DVR HI/LO SIDE 40QFN
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Tape & Reel (TR) | - | PWM | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 40-VFQFN Exposed Pad | 40-QFN (6x6) | Surface Mount | Bootstrap Circuit | NMOS | 50A | Over Temperature，UVLO | Half Bridge | - | 80A | 4.5 V ~ 16 V | |||
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ON Semiconductor |
3,125
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HI/LO SIDE 40QFN
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Cut Tape (CT) | - | PWM | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 40-VFQFN Exposed Pad | 40-QFN (6x6) | Surface Mount | Bootstrap Circuit | NMOS | 50A | Over Temperature，UVLO | Half Bridge | - | 80A | 4.5 V ~ 16 V | |||
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ON Semiconductor |
3,125
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HI/LO SIDE 40QFN
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- | - | PWM | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 40-VFQFN Exposed Pad | 40-QFN (6x6) | Surface Mount | Bootstrap Circuit | NMOS | 50A | Over Temperature，UVLO | Half Bridge | - | 80A | 4.5 V ~ 16 V | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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SMART POWER STAGE (SPS)
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- | PowerTrench，SyncFET | PWM | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TA) | - | - | - | - | Power MOSFET | 50A | - | Half Bridge | - | 2A | - | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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100V SMART POWER STAGE
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- | PowerTrench | PWM | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | - | - | - | - | Power MOSFET | 20A | - | Half Bridge | - | 4A | - |
