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Découvrez les produits 79
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Memory Size Technology Clock Frequency Access Time Memory Interface Write Cycle Time - Word, Page
TH58BVG2S3HTA00
Toshiba Memory America,Inc.
192
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 4G PARALLEL 48TSOP I
Tray Benand 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 4Gb (512M x 8) FLASH - NAND (SLC) - 25ns Parallel 25ns
TH58NVG2S3HTA00
Toshiba Memory America,Inc.
187
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 4G PARALLEL 48TSOP I
Tray - 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 4Gb (512M x 8) FLASH - NAND (SLC) - 25ns Parallel 25ns
TH58BVG2S3HTAI0
Toshiba Memory America,Inc.
182
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 4G PARALLEL 48TSOP I
Tray Benand 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 4Gb (512M x 8) FLASH - NAND (SLC) - 25ns Parallel 25ns
TH58NVG5S0FTA20
Toshiba Memory America,Inc.
480
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 32G PARALLEL 48TSOP I
Tray - 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 32Gb (4G x 8) FLASH - NAND (SLC) - 25ns Parallel 25ns
THGAF8G9T43BAIR
Toshiba Memory America,Inc.
9
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 512G UFS 153VFBGA
Tray Consumer UFS 2.7 V ~ 3.6 V -25°C ~ 85°C (TC) 153-VFBGA 153-VFBGA (11.5x13) 512Gb (64G x 8) FLASH - NAND - - UFS -
THGAF8T0T43BAIR
Toshiba Memory America,Inc.
44
3 jours
-
MOQ: 1  MPQ: 1
128GB VER. 2.1 UFS UNIVERSAL FLA
Tray Consumer UFS 2.7 V ~ 3.6 V -25°C ~ 85°C (TC) 153-VFBGA 153-VFBGA (11.5x13) 1Tb (128G x 8) FLASH - NAND - - UFS -
THGAF8T1T83BAIR
Toshiba Memory America,Inc.
15
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 2T UFS 153VFBGA
Tray Consumer UFS 2.7 V ~ 3.6 V -25°C ~ 85°C (TC) 153-VFBGA 153-VFBGA (11.5x13) 2Tb (256G x 8) FLASH - NAND - - UFS -
TC58CVG2S0HRAIG
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH 4G SPI 104MHZ 8WSON
Tray - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 8-WDFN Exposed Pad 8-WSON (6x8) 4Gb (512M x 8) FLASH - NAND (SLC) 104MHz 280μs SPI - Quad I/O -
TC58CVG0S3HRAIG
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH 1G SPI 104MHZ 8WSON
Tray - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 8-WDFN Exposed Pad 8-WSON (6x8) 1Gb (128M x 8) FLASH - NAND (SLC) 104MHz 155μs SPI - Quad I/O -
TH58NVG2S3HTAI0
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH 4G PARALLEL 48TSOP I
Tray - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 4Gb (512M x 8) FLASH - NAND (SLC) - 25ns Parallel 25ns
TH58NVG4S0HTA20
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH 16G PARALLEL 48TSOP I
Tray - 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 16Gb (2G x 8) FLASH - NAND (SLC) - 25ns Parallel 25ns
TH58NVG4S0HTAK0
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH 16G PARALLEL 48TSOP I
Tray - 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 16Gb (2G x 8) FLASH - NAND (SLC) - 25ns Parallel 25ns
THGAF8G8T23BAIL
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH 256G UFS 153WFBGA
Tray Consumer UFS 2.7 V ~ 3.6 V -25°C ~ 85°C (TC) 153-WFBGA 153-WFBGA (11.5x13) 256Gb (32G x 8) FLASH - NAND - - UFS -
THGBMNG5D1LBAIT
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 168  MPQ: 1
IC FLASH 32G MMC 52MHZ 153WFBGA
Tray eMMC 2.7 V ~ 3.6 V -25°C ~ 85°C (TA) 153-WFBGA 153-WFBGA (11x10) 32Gb (4G x 8) FLASH - NAND 52MHz - MMC -
TC58NVG2S0FTA00
Toshiba Memory America,Inc.
1
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 4G PARALLEL 48TSOP I
Tray - 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 4Gb (512M x 8) FLASH - NAND (SLC) - 25ns Parallel 25ns
THGBMHG6C1LBAIL
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 152  MPQ: 1
IC FLASH 64G MMC 52MHZ 153WFBGA
Tray eMMC 2.7 V ~ 3.6 V -25°C ~ 85°C (TA) 153-WFBGA 153-WFBGA (11.5x13) 64Gb (8G x 8) FLASH - NAND 52MHz - MMC -
THGBMHG7C1LBAIL
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 152  MPQ: 1
IC FLASH 128G MMC 153WFBGA
Tray eMMC 2.7 V ~ 3.6 V -25°C ~ 85°C (TA) 153-WFBGA 153-WFBGA (11.5x13) 128Gb (16G x 8) FLASH - NAND 52MHz - MMC -
THGBMHG8C2LBAIL
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 152  MPQ: 1
IC FLASH 256G MMC 153WFBGA
Tray eMMC 2.7 V ~ 3.6 V -25°C ~ 85°C (TA) 153-WFBGA 153-WFBGA (11.5x13) 256Gb (32G x 8) FLASH - NAND 52MHz - MMC -
THGBMHG9C4LBAIR
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 152  MPQ: 1
IC FLASH 512G MMC 153WFBGA
Tray eMMC 2.7 V ~ 3.6 V -25°C ~ 85°C (TA) 153-WFBGA 153-WFBGA (11.5x13) 512Gb (64G x 8) FLASH - NAND 52MHz - MMC -
TC58NVG1S3ETA00
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
IC FLASH 2G PARALLEL 48TSOP I
Tray - 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 48-TFSOP (0.724",18.40mm Width) 48-TSOP I 2Gb (256M x 8) FLASH - NAND (SLC) - 25ns Parallel 25ns