- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Memory Size:
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- Technology:
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- Memory Interface:
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- Conditions sélectionnées:
Découvrez les produits 79
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | Technology | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | Technology | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | ||
Toshiba Memory America,Inc. |
192
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 48TSOP I
|
Tray | Benand | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 4Gb (512M x 8) | FLASH - NAND (SLC) | - | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
187
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 48TSOP I
|
Tray | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 4Gb (512M x 8) | FLASH - NAND (SLC) | - | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 48TSOP I
|
Tray | Benand | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 4Gb (512M x 8) | FLASH - NAND (SLC) | - | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
480
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 32G PARALLEL 48TSOP I
|
Tray | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 32Gb (4G x 8) | FLASH - NAND (SLC) | - | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
9
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 512G UFS 153VFBGA
|
Tray | Consumer UFS | 2.7 V ~ 3.6 V | -25°C ~ 85°C (TC) | 153-VFBGA | 153-VFBGA (11.5x13) | 512Gb (64G x 8) | FLASH - NAND | - | - | UFS | - | ||||
Toshiba Memory America,Inc. |
44
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
128GB VER. 2.1 UFS UNIVERSAL FLA
|
Tray | Consumer UFS | 2.7 V ~ 3.6 V | -25°C ~ 85°C (TC) | 153-VFBGA | 153-VFBGA (11.5x13) | 1Tb (128G x 8) | FLASH - NAND | - | - | UFS | - | ||||
Toshiba Memory America,Inc. |
15
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 2T UFS 153VFBGA
|
Tray | Consumer UFS | 2.7 V ~ 3.6 V | -25°C ~ 85°C (TC) | 153-VFBGA | 153-VFBGA (11.5x13) | 2Tb (256G x 8) | FLASH - NAND | - | - | UFS | - | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G SPI 104MHZ 8WSON
|
Tray | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 8-WDFN Exposed Pad | 8-WSON (6x8) | 4Gb (512M x 8) | FLASH - NAND (SLC) | 104MHz | 280μs | SPI - Quad I/O | - | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 1G SPI 104MHZ 8WSON
|
Tray | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 8-WDFN Exposed Pad | 8-WSON (6x8) | 1Gb (128M x 8) | FLASH - NAND (SLC) | 104MHz | 155μs | SPI - Quad I/O | - | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 48TSOP I
|
Tray | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 4Gb (512M x 8) | FLASH - NAND (SLC) | - | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 16G PARALLEL 48TSOP I
|
Tray | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 16Gb (2G x 8) | FLASH - NAND (SLC) | - | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 16G PARALLEL 48TSOP I
|
Tray | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 16Gb (2G x 8) | FLASH - NAND (SLC) | - | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 256G UFS 153WFBGA
|
Tray | Consumer UFS | 2.7 V ~ 3.6 V | -25°C ~ 85°C (TC) | 153-WFBGA | 153-WFBGA (11.5x13) | 256Gb (32G x 8) | FLASH - NAND | - | - | UFS | - | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 168 MPQ: 1
|
IC FLASH 32G MMC 52MHZ 153WFBGA
|
Tray | eMMC | 2.7 V ~ 3.6 V | -25°C ~ 85°C (TA) | 153-WFBGA | 153-WFBGA (11x10) | 32Gb (4G x 8) | FLASH - NAND | 52MHz | - | MMC | - | ||||
Toshiba Memory America,Inc. |
1
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 48TSOP I
|
Tray | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 4Gb (512M x 8) | FLASH - NAND (SLC) | - | 25ns | Parallel | 25ns | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 152 MPQ: 1
|
IC FLASH 64G MMC 52MHZ 153WFBGA
|
Tray | eMMC | 2.7 V ~ 3.6 V | -25°C ~ 85°C (TA) | 153-WFBGA | 153-WFBGA (11.5x13) | 64Gb (8G x 8) | FLASH - NAND | 52MHz | - | MMC | - | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 152 MPQ: 1
|
IC FLASH 128G MMC 153WFBGA
|
Tray | eMMC | 2.7 V ~ 3.6 V | -25°C ~ 85°C (TA) | 153-WFBGA | 153-WFBGA (11.5x13) | 128Gb (16G x 8) | FLASH - NAND | 52MHz | - | MMC | - | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 152 MPQ: 1
|
IC FLASH 256G MMC 153WFBGA
|
Tray | eMMC | 2.7 V ~ 3.6 V | -25°C ~ 85°C (TA) | 153-WFBGA | 153-WFBGA (11.5x13) | 256Gb (32G x 8) | FLASH - NAND | 52MHz | - | MMC | - | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 152 MPQ: 1
|
IC FLASH 512G MMC 153WFBGA
|
Tray | eMMC | 2.7 V ~ 3.6 V | -25°C ~ 85°C (TA) | 153-WFBGA | 153-WFBGA (11.5x13) | 512Gb (64G x 8) | FLASH - NAND | 52MHz | - | MMC | - | ||||
Toshiba Memory America,Inc. |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC FLASH 2G PARALLEL 48TSOP I
|
Tray | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 48-TFSOP (0.724",18.40mm Width) | 48-TSOP I | 2Gb (256M x 8) | FLASH - NAND (SLC) | - | 25ns | Parallel | 25ns |