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Découvrez les produits 9,677
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Memory Size Memory Type Technology Memory Format Clock Frequency Access Time Memory Interface Write Cycle Time - Word, Page
MT25QU128ABA1EW7-0SIT
Micron Technology Inc.
3,058
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 128M SPI 133MHZ 8WPDFN
Tray - 1.7 V ~ 2 V -40°C ~ 85°C (TA) 8-WDFN Exposed Pad 8-WPDFN (6x5)(MLP8) Surface Mount 128Mb (16M x 8) Non-Volatile FLASH - NOR Flash 133MHz - SPI 8ms,2.8ms
MT25QL256ABA8E12-1SIT
Micron Technology Inc.
4,565
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 256M SPI 24TPBGA
Tray - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 24-TBGA 24-T-PBGA (6x8) Surface Mount 256Mb (32M x 8) Non-Volatile FLASH - NOR Flash 133MHz - SPI 8ms,2.8ms
MT28EW128ABA1HPC-0SIT
Micron Technology Inc.
3,972
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 128M PARALLEL 64LBGA
Tray - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 64-LBGA 64-LBGA (11x13) Surface Mount 128Mb (16M x 8,8M x 16) Non-Volatile FLASH - NOR Flash - 95ns Parallel 60ns
MT47H32M16NF-25E IT:H TR
Micron Technology Inc.
6,000
3 jours
-
MOQ: 2000  MPQ: 1
IC DRAM 512M PARALLEL 84FBGA
Tape & Reel (TR) - 1.7 V ~ 1.9 V -40°C ~ 85°C (TA) 84-TFBGA 84-FBGA (8x12.5) Surface Mount 512Mb (32M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT47H32M16NF-25E IT:H TR
Micron Technology Inc.
7,562
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 84FBGA
Cut Tape (CT) - 1.7 V ~ 1.9 V -40°C ~ 85°C (TA) 84-TFBGA 84-FBGA (8x12.5) Surface Mount 512Mb (32M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT47H32M16NF-25E IT:H TR
Micron Technology Inc.
7,562
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 84FBGA
- - 1.7 V ~ 1.9 V -40°C ~ 85°C (TA) 84-TFBGA 84-FBGA (8x12.5) Surface Mount 512Mb (32M x 16) Volatile SDRAM - DDR2 DRAM 400MHz 400ps Parallel 15ns
MT48LC16M16A2P-6A:G TR
Micron Technology Inc.
16,000
3 jours
-
MOQ: 2000  MPQ: 1
IC DRAM 256M PARALLEL 54TSOP
Tape & Reel (TR) - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 54-TSOP (0.400",10.16mm Width) 54-TSOP II Surface Mount 256Mb (16M x 16) Volatile SDRAM DRAM 167MHz 5.4ns Parallel 12ns
MT48LC16M16A2P-6A:G TR
Micron Technology Inc.
16,464
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 54TSOP
Cut Tape (CT) - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 54-TSOP (0.400",10.16mm Width) 54-TSOP II Surface Mount 256Mb (16M x 16) Volatile SDRAM DRAM 167MHz 5.4ns Parallel 12ns
MT48LC16M16A2P-6A:G TR
Micron Technology Inc.
16,464
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 54TSOP
- - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 54-TSOP (0.400",10.16mm Width) 54-TSOP II Surface Mount 256Mb (16M x 16) Volatile SDRAM DRAM 167MHz 5.4ns Parallel 12ns
MT28EW256ABA1HPC-0SIT
Micron Technology Inc.
17,778
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 256M PARALLEL 64LBGA
Tray - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 64-LBGA 64-LBGA (11x13) Surface Mount 256Mb (32M x 8,16M x 16) Non-Volatile FLASH - NOR Flash - 75ns Parallel 60ns
MT28EW256ABA1LJS-0SIT
Micron Technology Inc.
4,765
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 256M PARALLEL 56TSOP
Tray - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 56-TFSOP (0.724",18.40mm Width) 56-TSOP (14x20) Surface Mount 256Mb (32M x 8,16M x 16) Non-Volatile FLASH - NOR Flash - 75ns Parallel 60ns
MT25QL512ABB8ESF-0SIT
Micron Technology Inc.
2,806
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 512M SPI 133MHZ 16SOP2
Tray - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 16-SOIC (0.295",7.50mm Width) 16-SOP2 Surface Mount 512Mb (64M x 8) Non-Volatile FLASH - NOR Flash 133MHz - SPI 8ms,2.8ms
MT41J128M16JT-125:K TR
Micron Technology Inc.
8,000
3 jours
-
MOQ: 2000  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Tape & Reel (TR) - 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 96-TFBGA 96-FBGA (8x14) Surface Mount 2Gb (128M x 16) Volatile SDRAM - DDR3 DRAM 800MHz 13.75ns Parallel -
MT41J128M16JT-125:K TR
Micron Technology Inc.
9,566
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Cut Tape (CT) - 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 96-TFBGA 96-FBGA (8x14) Surface Mount 2Gb (128M x 16) Volatile SDRAM - DDR3 DRAM 800MHz 13.75ns Parallel -
MT41J128M16JT-125:K TR
Micron Technology Inc.
9,566
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
- - 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 96-TFBGA 96-FBGA (8x14) Surface Mount 2Gb (128M x 16) Volatile SDRAM - DDR3 DRAM 800MHz 13.75ns Parallel -
MT41K64M16TW-107 AIT:J TR
Micron Technology Inc.
2,000
3 jours
-
MOQ: 2000  MPQ: 1
IC DRAM 1G PARALLEL 96FBGA
Tape & Reel (TR) - 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 96-TFBGA 96-FBGA (8x14) Surface Mount 1Gb (64M x 16) Volatile SDRAM - DDR3L DRAM 933MHz 20ns Parallel -
MT41K64M16TW-107 AIT:J TR
Micron Technology Inc.
2,978
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 96FBGA
Cut Tape (CT) - 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 96-TFBGA 96-FBGA (8x14) Surface Mount 1Gb (64M x 16) Volatile SDRAM - DDR3L DRAM 933MHz 20ns Parallel -
MT41K64M16TW-107 AIT:J TR
Micron Technology Inc.
2,978
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 96FBGA
- - 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 96-TFBGA 96-FBGA (8x14) Surface Mount 1Gb (64M x 16) Volatile SDRAM - DDR3L DRAM 933MHz 20ns Parallel -
MT28EW512ABA1LPC-0SIT
Micron Technology Inc.
1,104
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 512M PARALLEL 64LBGA
Tray - 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 64-LBGA 64-LBGA (11x13) Surface Mount 512Mb (64M x 8,32M x 16) Non-Volatile FLASH - NOR Flash - 95ns Parallel 60ns
MT41K64M16TW-107:J
Micron Technology Inc.
7,280
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 96FBGA
Tray - 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 96-TFBGA 96-FBGA (8x14) Surface Mount 1Gb (64M x 16) Volatile SDRAM - DDR3L DRAM 933MHz 20ns Parallel -