Mémoire - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Voltage - Supply：

Operating Temperature：

Package / Case：

Supplier Device Package：

Mounting Type：

Memory Size：

Memory Type：

Technology：

Memory Format：

Clock Frequency：

Access Time：

Memory Interface：

Write Cycle Time - Word, Page：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface	Write Cycle Time - Word, Page
	MT48LC16M16A2TG-6A IT:GTR	Alliance Memory，Inc.	6,000	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 2000 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tape & Reel (TR)	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM	DRAM	167MHz	5.4ns	Parallel	12ns
	MT48LC16M16A2TG-6A IT:GTR	Alliance Memory，Inc.	7,449	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Cut Tape (CT)	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM	DRAM	167MHz	5.4ns	Parallel	12ns
	MT48LC16M16A2TG-6A IT:GTR	Alliance Memory，Inc.	7,449	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	-	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM	DRAM	167MHz	5.4ns	Parallel	12ns
	AS4C8M16SA-7TCN	Alliance Memory，Inc.	7,498	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	128Mb (8M x 16)	Volatile	SDRAM	DRAM	143MHz	5.4ns	Parallel	14ns
	MT48LC4M32B2TG-6A:L	Alliance Memory，Inc.	1,960	3 jours	-	IC DRAM 128M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 86TSOP II	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	86-TFSOP (0.400"，10.16mm Width)	86-TSOP II	Surface Mount	128Mb (4M x 32)	Volatile	SDRAM	DRAM	167MHz	5.4ns	Parallel	12ns
	AS6C6264-55PCN	Alliance Memory，Inc.	415	3 jours	-	IC SRAM 64K PARALLEL 28DIP MOQ: 1 MPQ: 1	IC SRAM 64K PARALLEL 28DIP	Tube	-	2.7 V ~ 5.5 V	0°C ~ 70°C (TA)	28-DIP (0.600"，15.24mm)	28-PDIP	Through Hole	64Kb (8K x 8)	Volatile	SRAM - Asynchronous	SRAM	-	55ns	Parallel	55ns
	MT48LC4M32B2TG-6A IT:L	Alliance Memory，Inc.	1,611	3 jours	-	IC DRAM 128M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 86TSOP II	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	86-TFSOP (0.400"，10.16mm Width)	86-TSOP II	Surface Mount	128Mb (4M x 32)	Volatile	SDRAM	DRAM	167MHz	5.4ns	Parallel	12ns
	AS6C1008-55PCN	Alliance Memory，Inc.	3,124	3 jours	-	IC SRAM 1M PARALLEL 32DIP MOQ: 1 MPQ: 1	IC SRAM 1M PARALLEL 32DIP	Tube	-	2.7 V ~ 5.5 V	0°C ~ 70°C (TA)	32-DIP (0.600"，15.24mm)	32-PDIP	Through Hole	1Mb (128K x 8)	Volatile	SRAM - Asynchronous	SRAM	-	55ns	Parallel	55ns
	AS4C16M16MD1-6BCN	Alliance Memory，Inc.	701	3 jours	-	IC DRAM 256M PARALLEL 60FPBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 60FPBGA	Tray	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TJ)	60-TFBGA	60-FPBGA (8x9)	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM - Mobile LPDDR	DRAM	166MHz	-	Parallel	15ns
	AS6C2016-55ZIN	Alliance Memory，Inc.	5,538	3 jours	-	IC SRAM 2M PARALLEL 44TSOP II MOQ: 1 MPQ: 1	IC SRAM 2M PARALLEL 44TSOP II	Tray	-	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	44-TSOP (0.400"，10.16mm Width)	44-TSOP II	Surface Mount	2Mb (128K x 16)	Volatile	SRAM - Asynchronous	SRAM	-	55ns	Parallel	55ns
	AS4C8M16SA-6TIN	Alliance Memory，Inc.	5,799	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	128Mb (8M x 16)	Volatile	SDRAM	DRAM	166MHz	5ns	Parallel	12ns
	AS4C16M16SA-7TCN	Alliance Memory，Inc.	1,545	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM	DRAM	143MHz	5.4ns	Parallel	14ns
	AS4C16M16SA-6TIN	Alliance Memory，Inc.	2,280	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM	DRAM	166MHz	5ns	Parallel	12ns
	AS6C4008-55SIN	Alliance Memory，Inc.	1,104	3 jours	-	IC SRAM 4M PARALLEL 32SOP MOQ: 1 MPQ: 1	IC SRAM 4M PARALLEL 32SOP	Tube	-	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	32-SOIC (0.445"，11.30mm Width)	32-SOP	Surface Mount	4Mb (512K x 8)	Volatile	SRAM - Asynchronous	SRAM	-	55ns	Parallel	55ns
	AS4C32M16D1A-5TIN	Alliance Memory，Inc.	1,812	3 jours	-	IC DRAM 512M PARALLEL 66TSOP II MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 66TSOP II	Tray	-	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	Surface Mount	512Mb (32M x 16)	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	Parallel	15ns
	AS6C4008-55PCN	Alliance Memory，Inc.	893	3 jours	-	IC SRAM 4M PARALLEL 32DIP MOQ: 1 MPQ: 1	IC SRAM 4M PARALLEL 32DIP	Tube	-	2.7 V ~ 5.5 V	0°C ~ 70°C (TA)	32-DIP (0.600"，15.24mm)	32-PDIP	Through Hole	4Mb (512K x 8)	Volatile	SRAM - Asynchronous	SRAM	-	55ns	Parallel	55ns
	AS7C34098A-10TIN	Alliance Memory，Inc.	6,611	3 jours	-	IC SRAM 4M PARALLEL 44TSOP II MOQ: 1 MPQ: 1	IC SRAM 4M PARALLEL 44TSOP II	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	44-TSOP (0.400"，10.16mm Width)	44-TSOP2	Surface Mount	4Mb (256K x 16)	Volatile	SRAM - Asynchronous	SRAM	-	10ns	Parallel	10ns
	AS4C16M16SA-6BIN	Alliance Memory，Inc.	4,009	3 jours	-	IC DRAM 256M PARALLEL 54TFBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TFBGA	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TFBGA	54-TFBGA (8x8)	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM	DRAM	166MHz	5ns	Parallel	12ns
	AS4C16M16SA-6BAN	Alliance Memory，Inc.	1,020	3 jours	-	IC DRAM 256M PARALLEL 54TFBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TFBGA	Tray	Automotive，AEC-Q100	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	54-TFBGA	54-TFBGA (8x8)	Surface Mount	256Mb (16M x 16)	Volatile	SDRAM	DRAM	166MHz	5ns	Parallel	12ns
	AS4C128M8D2-25BIN	Alliance Memory，Inc.	2,279	3 jours	-	IC DRAM 1G PARALLEL 60FBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60FBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	60-TFBGA	60-FBGA (8x10)	Surface Mount	1Gb (128M x 8)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns

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