- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Memory Size：
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- Technology：
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- Memory Format：
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- Memory Interface：
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- Write Cycle Time - Word, Page：
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- Conditions sélectionnées:
Découvrez les produits 592
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Technology | Memory Format | Clock Frequency | Memory Interface | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Technology | Memory Format | Clock Frequency | Memory Interface | Write Cycle Time - Word, Page | |
|
|
|
STMicroelectronics |
1,042
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 16K PARALLEL 24PCDIP
|
Tube | 4.75 V ~ 5.5 V | 0°C ~ 70°C (TA) | 24-DIP Module (0.600"，15.24mm) | 24-PCDIP，CAPHAT? | Through Hole | 16Kb (2K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
142
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Fujitsu Electronics America，Inc. |
943
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FRAM 1M PARALLEL 48TSOP
|
Tray | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 48-TFSOP (0.488"，12.40mm Width) | 48-TSOP | Surface Mount | 1Mb (128K x 8) | FRAM (Ferroelectric RAM) | FRAM | - | Parallel | 150ns | ||
|
|
|
Fujitsu Electronics America，Inc. |
1,255
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FRAM 4M PARALLEL 44TSOP
|
Tray | 1.8 V ~ 3.6 V | -40°C ~ 85°C (TA) | 44-TSOP (0.400"，10.16mm Width) | 44-TSOP | Surface Mount | 4Mb (256K x 16) | FRAM (Ferroelectric RAM) | FRAM | - | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
109
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
191
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
280
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
230
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
467
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32EDIP
|
Tube | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
67
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 16K PARALLEL 24EDIP
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 24-DIP Module (0.600"，15.24mm) | 24-EDIP | Through Hole | 16Kb (2K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
40
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 16K PARALLEL 24EDIP
|
Tube | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 24-DIP Module (0.600"，15.24mm) | 24-EDIP | Through Hole | 16Kb (2K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
18
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
80
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 34PWRCAP
|
Tray | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 34-PowerCap? Module | 34-PowerCap Module | Surface Mount | 256Kb (32K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
48
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | 4.75 V ~ 5.25 V | -40°C ~ 85°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
14
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
18
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 8M PARALLEL 36EDIP
|
Tube | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 36-DIP Module (0.600"，15.24mm) | 36-EDIP | Through Hole | 8Mb (1M x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
41
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 16K PARALLEL 24EDIP
|
Tube | 4.75 V ~ 5.25 V | -40°C ~ 85°C (TA) | 24-DIP Module (0.600"，15.24mm) | 24-EDIP | Through Hole | 16Kb (2K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
STMicroelectronics |
1
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 16K PARALLEL 24PCDIP
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 24-DIP Module (0.600"，15.24mm) | 24-PCDIP，CAPHAT? | Through Hole | 16Kb (2K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 36 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | Parallel | 150ns | ||
|
|
|
Fujitsu Electronics America，Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
8MBIT FRAMX16 PARALLEL INTERFACE
|
Tray | 1.8 V ~ 3.6 V | -40°C ~ 85°C (TA) | 48-VFBGA | 48-BGA (6x8) | Surface Mount | 8Mb (512K x 16) | FRAM (Ferroelectric RAM) | FRAM | - | SPI | 150ns |
