Mémoire - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Voltage - Supply：

Operating Temperature：

Package / Case：

Supplier Device Package：

Memory Size：

Memory Type：

Technology：

Memory Format：

Clock Frequency：

Access Time：

Write Cycle Time - Word, Page：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	MT44K16M36RB-093E IT:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 576M PARALLEL 1067MHZ MOQ: 1190 MPQ: 1	IC DRAM 576M PARALLEL 1067MHZ	-	-	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	-	-	576Mb (16M x 36)	Volatile	DRAM	DRAM	1067MHz	8ns	-
	MT44K32M18RB-093E:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 576M PARALLEL 1067MHZ MOQ: 1190 MPQ: 1	IC DRAM 576M PARALLEL 1067MHZ	-	-	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	576Mb (32M x 18)	Volatile	DRAM	DRAM	1067MHz	8ns	-
	MT44K16M36RB-107E:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 576M PARALLEL 933MHZ MOQ: 1190 MPQ: 1	IC DRAM 576M PARALLEL 933MHZ	-	-	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	576Mb (16M x 36)	Volatile	DRAM	DRAM	933MHz	8ns	-
	MT44K32M18RB-107E:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 576M PARALLEL 933MHZ MOQ: 1190 MPQ: 1	IC DRAM 576M PARALLEL 933MHZ	-	-	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	576Mb (32M x 18)	Volatile	DRAM	DRAM	933MHz	8ns	-
	MT40A256M16GE-075E AAT:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 1.33GHZ MOQ: 1020 MPQ: 1	IC DRAM 4G PARALLEL 1.33GHZ	-	-	1.14 V ~ 1.26 V	-40°C ~ 105°C (TC)	-	-	4Gb (256M x 16)	Volatile	SDRAM - DDR4	DRAM	1.33GHz	-	-
	MT40A256M16GE-075E AIT:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 1.33GHZ MOQ: 1020 MPQ: 1	IC DRAM 4G PARALLEL 1.33GHZ	-	-	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	4Gb (256M x 16)	Volatile	SDRAM - DDR4	DRAM	1.33GHz	-	-
	MT46H32M16LFBF-6 AAT:C	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 166MHZ MOQ: 1782 MPQ: 1	IC DRAM 512M PARALLEL 166MHZ	-	-	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	-	-	512Mb (32M x 16)	Volatile	SDRAM - Mobile LPDDR	DRAM	166MHz	5.0ns	15ns
	MSM51V18160F-60T3-K7	ROHM Semiconductor	1,279	3 jours	-	IC DRAM 16M PARALLEL 50TSOP MOQ: 1 MPQ: 1	IC DRAM 16M PARALLEL 50TSOP	Tube	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	16Mb (1M x 16)	Volatile	DRAM	DRAM	-	30ns	-
	MSM5118160F-60T3K-MT	ROHM Semiconductor	4,915	3 jours	-	IC DRAM 16M PARALLEL 50TSOP MOQ: 1 MPQ: 1	IC DRAM 16M PARALLEL 50TSOP	-	-	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	-	-	16Mb (1M x 16)	Volatile	DRAM	DRAM	-	30ns	-
	CY14B104NA-ZS25XET	Cypress Semiconductor Corp	Enquête	-	-	IC NVSRAM 4M PARALLEL MOQ: 1000 MPQ: 1	IC NVSRAM 4M PARALLEL	Tape & Reel (TR)	-	3 V ~ 3.6 V	-40°C ~ 125°C (TA)	44-TSOP (0.400"，10.16mm Width)	44-TSOP II	4Mb (256K x 16)	Non-Volatile	NVSRAM (Non-Volatile SRAM)	NVSRAM	-	25ns	25ns
	CY14B104NA-ZS25XE	Cypress Semiconductor Corp	Enquête	-	-	IC NVSRAM 4M PARALLEL MOQ: 135 MPQ: 1	IC NVSRAM 4M PARALLEL	Tray	-	3 V ~ 3.6 V	-40°C ~ 125°C (TA)	44-TSOP (0.400"，10.16mm Width)	44-TSOP II	4Mb (256K x 16)	Non-Volatile	NVSRAM (Non-Volatile SRAM)	NVSRAM	-	25ns	25ns
	VPM9U1272S6B3PJ1MA	Viking Technology	Enquête	-	-	IC DRAM 4G PARALLEL 1.2GHZ MOQ: 5 MPQ: 1	IC DRAM 4G PARALLEL 1.2GHZ	-	-	1.2V	-	-	-	4Gb (512M x 8)	Volatile	SDRAM - DDR4	DRAM	1.2GHz	-	-
	VPM9U1272S6B3PJ1MAT	Viking Technology	Enquête	-	-	IC DRAM 4G PARALLEL 1.2GHZ MOQ: 5 MPQ: 1	IC DRAM 4G PARALLEL 1.2GHZ	-	-	1.2V	-	-	-	4Gb (512M x 8)	Volatile	SDRAM - DDR4	DRAM	1.2GHz	-	-
	VPM9U1272S6B3PJ1MAE	Viking Technology	Enquête	-	-	IC DRAM 4G PARALLEL 1.2GHZ MOQ: 5 MPQ: 1	IC DRAM 4G PARALLEL 1.2GHZ	-	-	1.2V	-	-	-	4Gb (512M x 8)	Volatile	SDRAM - DDR4	DRAM	1.2GHz	-	-
	VPM9U1272S6B3PJ1MAM	Viking Technology	Enquête	-	-	IC DRAM 4G PARALLEL 1.2GHZ MOQ: 5 MPQ: 1	IC DRAM 4G PARALLEL 1.2GHZ	-	-	1.2V	-	-	-	4Gb (512M x 8)	Volatile	SDRAM - DDR4	DRAM	1.2GHz	-	-
	MSM5117400F-60J3-7	ROHM Semiconductor	Enquête	-	-	IC DRAM 16M PARALLEL 26SOJ MOQ: 1890 MPQ: 1	IC DRAM 16M PARALLEL 26SOJ	-	-	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	-	-	16Mb (4M x 4)	Volatile	DRAM	DRAM	-	30ns	110ns
	MSM5117405F-60J3-7	ROHM Semiconductor	Enquête	-	-	IC DRAM 16M PARALLEL 26SOJ MOQ: 1890 MPQ: 1	IC DRAM 16M PARALLEL 26SOJ	Tube	-	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	-	-	16Mb (4M x 4)	Volatile	DRAM	DRAM	-	30ns	-
	MT29C4G96MAYAPCMJ-5 IT	Micron Technology Inc.	Enquête	-	-	IC FLASH RAM 4G PARALLEL 200MHZ MOQ: 1000 MPQ: 1	IC FLASH RAM 4G PARALLEL 200MHZ	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	4Gb (512M x 8)(NAND)，4Gb (128M x 32)(LPDRAM)	Non-Volatile	FLASH - NAND，Mobile LPDRAM	FLASH，RAM	200MHz	-	-
	MT29C4G96MAZAPCMJ-5 IT	Micron Technology Inc.	Enquête	-	-	IC FLASH RAM 4G PARALLEL 200MHZ MOQ: 1000 MPQ: 1	IC FLASH RAM 4G PARALLEL 200MHZ	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	4Gb (256M x 16)(NAND)，4Gb (128M x 32)(LPDRAM)	Non-Volatile	FLASH - NAND，Mobile LPDRAM	FLASH，RAM	200MHz	-	-
	EDBM432B3PD-1D-F-D	Micron Technology Inc.	Enquête	-	-	IC DRAM 12G PARALLEL 533MHZ MOQ: 1680 MPQ: 1	IC DRAM 12G PARALLEL 533MHZ	Tray	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	12Gb (384M x 32)	Volatile	SDRAM - Mobile LPDDR2	DRAM	533MHz	-	-

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