- Packaging：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Memory Size：
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- Conditions sélectionnées:
Découvrez les produits 11
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | |
|
|
|
ISSI，Integrated Silicon Solution Inc |
1,340
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tray | -40°C ~ 85°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 1Gb (64M x 16) | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
221
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tray | 0°C ~ 85°C (TC) | 84-TFBGA | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
110
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tray | 0°C ~ 85°C (TC) | 84-TFBGA | 84-TWBGA (8x12.5) | 1Gb (64M x 16) | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
247
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 60TWBGA
|
Tray | -40°C ~ 85°C (TA) | 60-TFBGA | 60-TWBGA (8x10.5) | 512Mb (64M x 8) | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
32
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 60TWBGA
|
Tray | 0°C ~ 85°C (TC) | 60-TFBGA | 60-TWBGA (8x10.5) | 512Mb (64M x 8) | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tray | -40°C ~ 85°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 1G PARALLEL 333MHZ
|
Tape & Reel (TR) | -40°C ~ 85°C (TA) | 84-TFBGA | 84-TFBGA (12.5x8) | 1Gb (64M x 16) | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 209 MPQ: 1
|
IC DRAM 1G PARALLEL 333MHZ
|
Tray | -40°C ~ 85°C (TA) | 84-TFBGA | 84-TFBGA (12.5x8) | 1Gb (64M x 16) | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tape & Reel (TR) | -40°C ~ 85°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 512M PARALLEL 60TWBGA
|
Tape & Reel (TR) | -40°C ~ 85°C (TA) | 60-TFBGA | 60-TWBGA (8x10.5) | 512Mb (64M x 8) | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tape & Reel (TR) | -40°C ~ 85°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 1Gb (64M x 16) |
