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Memory Format:
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Découvrez les produits 189
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Memory Size Memory Type Technology Memory Format Clock Frequency Memory Interface Write Cycle Time - Word, Page
IS25WP128-RMLE
ISSI,Integrated Silicon Solution Inc
396
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 128M SPI 133MHZ 16SOIC
Tube 1.65 V ~ 1.95 V -40°C ~ 105°C 16-SOIC (0.295",7.50mm Width) 16-SOIC 128Mb (16M x 8) Non-Volatile FLASH - NOR Flash 133MHz SPI 800μs
IS25WP064A-RMLE
ISSI,Integrated Silicon Solution Inc
166
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 64M SPI 133MHZ 16SOIC
Tube 1.65 V ~ 1.95 V -40°C ~ 105°C 16-SOIC (0.295",7.50mm Width) 16-SOIC 64Mb (8M x 8) Non-Volatile FLASH - NOR Flash 133MHz SPI - Quad I/O,QPI,DTR 800μs
IS25WP064A-RMLE-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH 64M SPI 133MHZ 16SOIC
Tape & Reel (TR) 1.65 V ~ 1.95 V -40°C ~ 105°C 16-SOIC (0.295",7.50mm Width) 16-SOIC 64Mb (8M x 8) Non-Volatile FLASH - NOR Flash 133MHz SPI - Quad I/O,QPI,DTR 800μs
IS25WP128-RMLE-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH 128M SPI 133MHZ 16SOIC
Tape & Reel (TR) 1.65 V ~ 1.95 V -40°C ~ 105°C 16-SOIC (0.295",7.50mm Width) 16-SOIC 128Mb (16M x 8) Non-Volatile FLASH - NOR Flash 133MHz SPI 800μs
IS25LP256D-RGLE-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC FLASH 256M SERIAL 24TFBGA
Tape & Reel (TR) 2.3 V ~ 3.6 V -40°C ~ 105°C 24-TBGA 24-TFBGA (6x8) 256Mb (32M x 8) Non-Volatile FLASH - NOR Flash 133MHz Serial 800μs
IS25LP256D-RMLE-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH 256M SERIAL 16SOIC
Tape & Reel (TR) 2.3 V ~ 3.6 V -40°C ~ 105°C 16-SOIC (0.295",7.50mm Width) 16-SOIC 256Mb (32M x 8) Non-Volatile FLASH - NOR Flash 133MHz Serial 800μs
IS25LP256D-RGLE
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 480  MPQ: 1
IC FLASH 256M SERIAL 24TFBGA
- 2.3 V ~ 3.6 V -40°C ~ 105°C 24-TBGA 24-TFBGA (6x8) 256Mb (32M x 8) Non-Volatile FLASH - NOR Flash 133MHz Serial 800μs
IS25LP256D-RMLE
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 220  MPQ: 1
IC FLASH 256M SERIAL 16SOIC
- 2.3 V ~ 3.6 V -40°C ~ 105°C 16-SOIC (0.295",7.50mm Width) 16-SOIC 256Mb (32M x 8) Non-Volatile FLASH - NOR Flash 133MHz Serial 800μs
CY7C1355B-117AC
Cypress Semiconductor Corp
Enquête
-
-
MOQ: 144  MPQ: 1
IC SRAM 9M PARALLEL 100TQFP
Tray 3.135 V ~ 3.6 V 0°C ~ 70°C (TA) 100-LQFP 100-TQFP (14x20) 9Mb (256K x 36) Volatile SRAM - Synchronous SRAM 117MHz Parallel -
MT48H8M16LFB4-8 IT TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 128M PARALLEL 54VFBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V -40°C ~ 85°C (TA) 54-VFBGA 54-VFBGA (8x8) 128Mb (8M x 16) Volatile SDRAM - Mobile LPSDR DRAM 125MHz Parallel 15ns
MT48H8M16LFB4-8 IT TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 54VFBGA
Cut Tape (CT) 1.7 V ~ 1.9 V -40°C ~ 85°C (TA) 54-VFBGA 54-VFBGA (8x8) 128Mb (8M x 16) Volatile SDRAM - Mobile LPSDR DRAM 125MHz Parallel 15ns
MT48H8M16LFB4-8 TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 128M PARALLEL 54VFBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V 0°C ~ 70°C (TA) 54-VFBGA 54-VFBGA (8x8) 128Mb (8M x 16) Volatile SDRAM - Mobile LPSDR DRAM 125MHz Parallel 15ns
MT48H8M16LFB4-8 TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 54VFBGA
Cut Tape (CT) 1.7 V ~ 1.9 V 0°C ~ 70°C (TA) 54-VFBGA 54-VFBGA (8x8) 128Mb (8M x 16) Volatile SDRAM - Mobile LPSDR DRAM 125MHz Parallel 15ns
MT48H8M32LFB5-8 IT TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 90VFBGA
Cut Tape (CT) 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 90-VFBGA 90-VFBGA (8x13) 256Mb (8M x 32) Volatile SDRAM - Mobile LPSDR DRAM 125MHz Parallel 15ns
MT48H8M32LFB5-8 TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 256M PARALLEL 90VFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) 90-VFBGA 90-VFBGA (8x13) 256Mb (8M x 32) Volatile SDRAM - Mobile LPSDR DRAM 125MHz Parallel 15ns
MT48H8M32LFB5-8 TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 90VFBGA
Cut Tape (CT) 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) 90-VFBGA 90-VFBGA (8x13) 256Mb (8M x 32) Volatile SDRAM - Mobile LPSDR DRAM 125MHz Parallel 15ns
MT48LC8M32LFB5-8 IT TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 256M PARALLEL 90VFBGA
Tape & Reel (TR) 3 V ~ 3.6 V -40°C ~ 85°C (TA) 90-VFBGA 90-VFBGA (8x13) 256Mb (8M x 32) Volatile SDRAM - Mobile LPSDR DRAM 125MHz Parallel 15ns
MT48LC8M32LFB5-8 IT TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 90VFBGA
Cut Tape (CT) 3 V ~ 3.6 V -40°C ~ 85°C (TA) 90-VFBGA 90-VFBGA (8x13) 256Mb (8M x 32) Volatile SDRAM - Mobile LPSDR DRAM 125MHz Parallel 15ns
MT48LC8M32LFB5-8 TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 256M PARALLEL 90VFBGA
Tape & Reel (TR) 3 V ~ 3.6 V 0°C ~ 70°C (TA) 90-VFBGA 90-VFBGA (8x13) 256Mb (8M x 32) Volatile SDRAM - Mobile LPSDR DRAM 125MHz Parallel 15ns
MT48LC8M32LFB5-8 TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 90VFBGA
Cut Tape (CT) 3 V ~ 3.6 V 0°C ~ 70°C (TA) 90-VFBGA 90-VFBGA (8x13) 256Mb (8M x 32) Volatile SDRAM - Mobile LPSDR DRAM 125MHz Parallel 15ns