Memory Format:
Write Cycle Time - Word, Page:
Conditions sélectionnées:
Découvrez les produits 1,082
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Memory Size Technology Memory Format Clock Frequency Write Cycle Time - Word, Page
AS7C1026B-10TCNTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC SRAM 1M PARALLEL 44TSOP II
Tape & Reel (TR) 4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 44-TSOP (0.400",10.16mm Width) 44-TSOP2 1Mb (64K x 16) SRAM - Asynchronous SRAM - 10ns
AS7C31026B-10TCNTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC SRAM 1M PARALLEL 44TSOP II
Tape & Reel (TR) 3 V ~ 3.6 V 0°C ~ 70°C (TA) 44-TSOP (0.400",10.16mm Width) 44-TSOP2 1Mb (64K x 16) SRAM - Asynchronous SRAM - 10ns
IS61WV12816EDBLL-10TLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1000  MPQ: 1
IC SRAM 2M PARALLEL 44TSOP2
Tape & Reel (TR) 2.4 V ~ 3.6 V -40°C ~ 85°C (TA) 44-TSOP (0.400",10.16mm Width) 44-TSOP II 2Mb (128K x 16) SRAM - Asynchronous SRAM - 10ns
IS61WV25616EDBLL-10TLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1000  MPQ: 1
IC SRAM 4M PARALLEL 44TSOP II
Tape & Reel (TR) 2.4 V ~ 3.6 V -40°C ~ 85°C (TA) 44-TSOP (0.400",10.16mm Width) 44-TSOP II 4Mb (256K x 16) SRAM - Asynchronous SRAM - 10ns
IS61WV6416DBLL-10BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC SRAM 1M PARALLEL 48TFBGA
Tape & Reel (TR) 2.4 V ~ 3.6 V -40°C ~ 85°C (TA) 48-TFBGA 48-miniBGA (6x8) 1Mb (64K x 16) SRAM - Asynchronous SRAM - 10ns
AS7C31024B-10TCN
Alliance Memory,Inc.
Enquête
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-
MOQ: 156  MPQ: 1
IC SRAM 1M PARALLEL 32TSOP I
Tray 3 V ~ 3.6 V 0°C ~ 70°C (TA) 32-TFSOP (0.724",18.40mm Width) 32-TSOP I 1Mb (128K x 8) SRAM - Asynchronous SRAM - 10ns
AS7C31026B-10TCN
Alliance Memory,Inc.
Enquête
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-
MOQ: 135  MPQ: 1
IC SRAM 1M PARALLEL 44TSOP II
Tray 3 V ~ 3.6 V 0°C ~ 70°C (TA) 44-TSOP (0.400",10.16mm Width) 44-TSOP2 1Mb (64K x 16) SRAM - Asynchronous SRAM - 10ns
AS7C1025B-10TJCNTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC SRAM 1M PARALLEL 32SOJ
Tape & Reel (TR) 4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 32-BSOJ (0.300",7.62mm Width) 32-SOJ 1Mb (128K x 8) SRAM - Asynchronous SRAM - 10ns
AS7C31024B-10TJCNTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC SRAM 1M PARALLEL 32SOJ
Tape & Reel (TR) 3 V ~ 3.6 V 0°C ~ 70°C (TA) 32-BSOJ (0.300",7.62mm Width) 32-SOJ 1Mb (128K x 8) SRAM - Asynchronous SRAM - 10ns
AS7C31025B-10TJCNTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC SRAM 1M PARALLEL 32SOJ
Tape & Reel (TR) 3 V ~ 3.6 V 0°C ~ 70°C (TA) 32-BSOJ (0.300",7.62mm Width) 32-SOJ 1Mb (128K x 8) SRAM - Asynchronous SRAM - 10ns
AS7C31025B-10JCNTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC SRAM 1M PARALLEL 32SOJ
Tape & Reel (TR) 3 V ~ 3.6 V 0°C ~ 70°C (TA) 32-BSOJ (0.400",10.16mm Width) 32-SOJ 1Mb (128K x 8) SRAM - Asynchronous SRAM - 10ns
AS7C31026B-10JCNTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC SRAM 1M PARALLEL 44SOJ
Tape & Reel (TR) 3 V ~ 3.6 V 0°C ~ 70°C (TA) 44-BSOJ (0.400",10.16mm Width) 44-SOJ 1Mb (64K x 16) SRAM - Asynchronous SRAM - 10ns
IS61WV12816EDBLL-10TLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 405  MPQ: 1
IC SRAM 2M PARALLEL 44TSOP2
Tray 2.4 V ~ 3.6 V -40°C ~ 85°C (TA) 44-TSOP (0.400",10.16mm Width) 44-TSOP II 2Mb (128K x 16) SRAM - Asynchronous SRAM - 10ns
IS61WV25616EDBLL-10BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC SRAM 4M PARALLEL 48TFBGA
Tape & Reel (TR) 2.4 V ~ 3.6 V -40°C ~ 85°C (TA) 48-TFBGA 48-miniBGA (6x8) 4Mb (256K x 16) SRAM - Asynchronous SRAM - 10ns
IS61WV5128EDBLL-10TLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1000  MPQ: 1
IC SRAM 4M PARALLEL 44TSOP2
Tape & Reel (TR) 2.4 V ~ 3.6 V -40°C ~ 85°C (TA) 44-TSOP (0.400",10.16mm Width) 44-TSOP II 4Mb (512K x 8) SRAM - Asynchronous SRAM - 10ns
IS61WV6416DBLL-10BLI
ISSI,Integrated Silicon Solution Inc
Enquête
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-
MOQ: 480  MPQ: 1
IC SRAM 1M PARALLEL 48TFBGA
Tray 2.4 V ~ 3.6 V -40°C ~ 85°C (TA) 48-TFBGA 48-miniBGA (6x8) 1Mb (64K x 16) SRAM - Asynchronous SRAM - 10ns
AS7C1025B-10TJCN
Alliance Memory,Inc.
Enquête
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-
MOQ: 220  MPQ: 1
IC SRAM 1M PARALLEL 32SOJ
Tube 4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 32-BSOJ (0.300",7.62mm Width) 32-SOJ 1Mb (128K x 8) SRAM - Asynchronous SRAM - 10ns
AS7C31024B-10TJCN
Alliance Memory,Inc.
Enquête
-
-
MOQ: 220  MPQ: 1
IC SRAM 1M PARALLEL 32SOJ
Tube 3 V ~ 3.6 V 0°C ~ 70°C (TA) 32-BSOJ (0.300",7.62mm Width) 32-SOJ 1Mb (128K x 8) SRAM - Asynchronous SRAM - 10ns
AS7C31025B-10TJCN
Alliance Memory,Inc.
Enquête
-
-
MOQ: 220  MPQ: 1
IC SRAM 1M PARALLEL 32SOJ
Tube 3 V ~ 3.6 V 0°C ~ 70°C (TA) 32-BSOJ (0.300",7.62mm Width) 32-SOJ 1Mb (128K x 8) SRAM - Asynchronous SRAM - 10ns
AS7C31026B-10JCN
Alliance Memory,Inc.
Enquête
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-
MOQ: 160  MPQ: 1
IC SRAM 1M PARALLEL 44SOJ
Tray 3 V ~ 3.6 V 0°C ~ 70°C (TA) 44-BSOJ (0.400",10.16mm Width) 44-SOJ 1Mb (64K x 16) SRAM - Asynchronous SRAM - 10ns