- Voltage - Supply：
-
- Operating Temperature：
-
- Supplier Device Package：
-
- Memory Size：
-
- Clock Frequency：
-
- Conditions sélectionnées:
Découvrez les produits 59
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Technology | Clock Frequency | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Technology | Clock Frequency | Write Cycle Time - Word, Page | |
|
|
|
Alliance Memory，Inc. |
171
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
134-BALL FBGA (10X11.5X1.0)
|
Tray | 1.14 V ~ 1.95 V | -20°C ~ 85°C (TA) | 134-FBGA (10x11.5) | 256Mb (8M x 32) | SDRAM - Mobile LPDDR2 | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
2,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 1G PARALLEL 134TFBGA
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 1Gb (64M x 16) | SDRAM - Mobile LPDDR2-S4 | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
2,335
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 134TFBGA
|
Cut Tape (CT) | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 1Gb (64M x 16) | SDRAM - Mobile LPDDR2-S4 | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
2,335
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 134TFBGA
|
- | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 1Gb (64M x 16) | SDRAM - Mobile LPDDR2-S4 | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
2,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 1G PARALLEL 134TFBGA
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 1Gb (32M x 32) | SDRAM - Mobile LPDDR2-S4 | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
2,335
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 134TFBGA
|
Cut Tape (CT) | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 1Gb (32M x 32) | SDRAM - Mobile LPDDR2-S4 | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
2,335
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 134TFBGA
|
- | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 1Gb (32M x 32) | SDRAM - Mobile LPDDR2-S4 | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
254
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 134TFBGA
|
Tray | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 1Gb (32M x 32) | SDRAM - Mobile LPDDR2-S4 | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
7
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 134TFBGA
|
Tray | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 1Gb (64M x 16) | SDRAM - Mobile LPDDR2-S4 | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 512M PARALLEL 400MHZ
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 512Mb (32M x 16) | SDRAM - Mobile LPDDR2-S4 | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 512M PARALLEL 400MHZ
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 512Mb (16M x 32) | SDRAM - Mobile LPDDR2-S4 | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 171 MPQ: 1
|
IC DRAM 512M PARALLEL 400MHZ
|
Tray | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 512Mb (32M x 16) | SDRAM - Mobile LPDDR2-S4 | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2400 MPQ: 1
|
IC DRAM 2G PARALLEL 400MHZ
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 2Gb (64M x 32) | SDRAM - Mobile LPDDR2-S4 | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 1G PARALLEL 533MHZ
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TA) | 134-TFBGA (10x11.5) | 1Gb (64M x 16) | SDRAM - Mobile LPDDR2-S4 | 533MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 171 MPQ: 1
|
IC DRAM 512M PARALLEL 400MHZ
|
Tray | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 512Mb (16M x 32) | SDRAM - Mobile LPDDR2-S4 | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 2G PARALLEL 400MHZ
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 2Gb (128M x 16) | SDRAM - Mobile LPDDR2-S4 | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 1G PARALLEL 533MHZ
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TA) | 134-TFBGA (10x11.5) | 1Gb (32M x 32) | SDRAM - Mobile LPDDR2-S4 | 533MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2400 MPQ: 1
|
IC DRAM 2G PARALLEL 533MHZ
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 2Gb (64M x 32) | SDRAM - Mobile LPDDR2-S4 | 533MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 2G PARALLEL 533MHZ
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 2Gb (128M x 16) | SDRAM - Mobile LPDDR2-S4 | 533MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2400 MPQ: 1
|
IC DRAM 2G PARALLEL 400MHZ
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TC) | 134-TFBGA (10x11.5) | 2Gb (128M x 16) | SDRAM - Mobile LPDDR2-S4 | 400MHz | 15ns |
